Papers by Author: P. Osmokrović

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Authors: D. Filipović, P. Osmokrović, Z.Ž. Lazarević
Authors: A. Vasić, P. Osmokrović, B. Lončar, S. Stanković
Abstract: Parameters that characterize semiconductor devices are often determined with difficulty, and their values very frequently depend on the method used for measurements and analysis. The extraction of diode parameters from the obtained I-V measurements could be complicated by their dependence on the voltage and the presence of series resistance. Therefore, an interpretation of the experimental I-V data must be very carefully made. In this paper, some methods for obtaining diode parameters such as saturation current, ideality factor and series resistance are presented. An evaluation of these methods based on their application for the extraction of the relevant parameters of photodiodes is also performed. Some of the methods that produce reliable and reproducible results are evaluated based on the experimentally obtained results, and in the view of the complexity of the used methods and their limitations.
Authors: Srboljub J. Stanković, M. Petrović, M. Kovačević, A. Vasić, P. Osmokrović, B. Lončar
Abstract: CdZnTe detectors have been employed in diagnostic X-ray spectroscopy. This paper presents the Monte Carlo calculation of X-ray deposited energy in a CdZnTe detector for different energies of photon beam. In incident photon direction, the distribution of absorbed dose as deposited energy in detector is determined. Based on the dependence of the detector response on the thickness and different Zn fractions, some conclusions about changes of the material characteristics could be drawn. Results of numerical simulation suggest that the CdZnTe detector could be suitable for X-ray low energy.
Authors: M. Stojanović, S. Stanković, Dj. Vukić, P. Osmokrović, P. Vasić, A. Vasić
Authors: A. Vasić, M. Stojanović, P. Osmokrović, N. Stojanović
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