Papers by Author: Pierre M. Masri

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Authors: Peter J. Wellmann, Z.G. Herro, Sakwe Aloysius Sakwe, Pierre M. Masri, M.V. Bogdanov, S.Yu. Karpov, A.V. Kulik, M.S. Ramm, Yuri N. Makarov
Authors: Z.G. Herro, Boris M. Epelbaum, Matthias Bickermann, Pierre M. Masri, Albrecht Winnacker
Authors: Z.G. Herro, Matthias Bickermann, Boris M. Epelbaum, Pierre M. Masri, Albrecht Winnacker
Authors: Christian Förster, Pierre M. Masri, Jörg Pezoldt
Authors: Petia Weih, Volker Cimalla, Christian Förster, Jörg Pezoldt, Thomas Stauden, Lothar Spieß, Henry Romanus, M. Eickhoff, M. Hermann, Pierre M. Masri, Oliver Ambacher
Authors: Laurent Ottaviani, Michel Kazan, Pierre M. Masri, Thierry Sauvage
Abstract: Metal impurities are known to degrade dramatically the performances of silicon-based devices, even at concentrations as low as 1012 cm-3. A specific process, named proximity gettering, has been optimised by some authors in order to reduce the influence of these impurities [1]. This process consists in the building of a favourable impurity trapping zone in a non-active area of the device, by introducing implantation defects. This paper reports on the application of introducing such gettering sites as an approach to control phonon properties in 4H-SiC epilayer, and increase the thermal conductivity.
Authors: Francisco M. Morales, Charbel Zgheib, S.I. Molina, Daniel Araújo, R. García, C. Fernández, A. Sanz-Hervás, Pierre M. Masri, Petia Weih, Thomas Stauden, Oliver Ambacher, Jörg Pezoldt
Authors: Jörg Pezoldt, Christian Förster, Thomas Stauden, Volker Cimalla, Francisco M. Morales, Charbel Zgheib, Pierre M. Masri, Oliver Ambacher
Abstract: The influence of the growth conditions on the 3C-SiC layer quality in terms of crystallinity, morphology and residual strain was investigated. In dependence on the chosen growth conditions the stress state can be varied between inhomogeneous and homogeneous strain. For the reduction of the residual strain an alternative route for the improvement of the epitaxial growth of 3CSiC( 100) on Si(100) was developed. It consists in covering the silicon wafers with germanium prior to the carbonization step. The achieved improvement in the residual strain and crystalline quality of the grown 3C-SiC layers is comparable to SOI substrates. These beneficial effects were reached by using a Ge coverage in the range of 0.5 to 1 monolayer with respect to the silicon surface.
Authors: Z.G. Herro, Boris M. Epelbaum, Matthias Bickermann, Pierre M. Masri, Christoph Seitz, Andreas Magerl, Albrecht Winnacker
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