Papers by Author: Richard Rizk

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Authors: H. Colder, M. Morales, Richard Rizk, I. Vickridge
Abstract: Co-sputtering of silicon and carbon in a hydrogenated plasma (20%Ar-80%H2) at temperatures, Ts, varying from 200°C to 600°C has been used to grow SiC thin films. We report on the influence of Ts on the crystallization, the ratio Si/C and the hydrogen content of the grown films. Film composition is determined by ion beam analysis via Rutherford backscattering spectrometry, nuclear reaction analysis via the 12C(d,p0)13C nuclear reaction and elastic recoil detection analysi(ERDA) for hydrogen content. Infrared absorption (IR) has been used to determine the crystalline fraction of the films and the concentration of the hydrogen bonded to Si or to C. Complementary to IR, bonding configuration has been also characterized by Raman spectroscopy. As Ts is increased, the crystalline fraction increases and the hydrogen content decreases, as observed by both ERDA and IR. It also appears that some films contain a few Si excess, probably located at the nanograin boundaries.
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Authors: Richard Rizk, X. Portier, G. Allais, Gerard Nouet
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Authors: S. Kerdiles, F. Gourbilleau, Richard Rizk, J.L. Pérez-Rodríguez, B. Garrido, O. González-Varona, L. Calvo-Barrio, J.R. Morante
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Authors: A. Ihlal, Richard Rizk, P. Voivenel, Gerard Nouet
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Authors: A. Ihlal, O.B.M. Hardouin Duparc, Richard Rizk
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Authors: D. Ballutaud, P. de Mierry, J.C. Pesant, Richard Rizk, A. Boutry-Forveille, M. Aucouturier
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Authors: S. Kerdiles, Richard Rizk, D. Grebille, L. Pichon, O. Bonnaud
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Authors: Sebastien Cueff, Christophe Labbé, Kentaro Watanabe, Benjamin Dierre, Takashi Sekiguchi, Richard Rizk
Abstract: This study focus on the nature of different Si-based sensitizers for Er3+ ions in Silicon- Rich Silicon oxide thin films. The samples were first analyzed by Cathodoluminescence technique to probe all emitting centers in the films. Some of these centers were found to be potential sensitizers for Er3+ ions, such as Silicon Oxygen Deficient Center and Non-Bridging Oxygen Hole Center, in addition to the well-known Silicon-nanoclusters (Si-nc). The influence of the thickness was subsequently examined, revealing that the formation of Si-nc is inhibited for films thinner than 100 nm and this led to less sensitization of the Er3+ ions. We demonstrate that the introduction of a SiO2 buffer layer can overcome this issue and increase the luminescence of Er3+ ions by a factor of five for films thinner than 50 nm that are usually used for electrically-driven photonic devices.
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