Papers by Author: Ronald J. Gutmann

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Authors: W. Wang, S. Banerjee, T. Paul Chow, Ronald J. Gutmann
1413
Authors: V. Khemka, K. Chatty, T. Paul Chow, Ronald J. Gutmann
1211
Authors: R.J. Kumar, Peter A. Losee, Can Hua Li, Joseph Seiler, I. Bhat, T. Paul Chow, J.M. Borrego, Ronald J. Gutmann
Abstract: A Microwave Photoconductivity Decay (M-PCD) technique which senses changes insample conductivity as carriers recombine following excitation by a laser pulse, has been used to determine the minority carrier recombination lifetime from the decay rate of carriers in 4H-SiC epitaxial layers. Decay times varying from 60 ns to 500 ns have been measured, with the decay increasing with thickness. Device simulations show that I-V characteristics of pin diodes fabricated with these epitaxial layers are compatible with the observed decay times.
405
Authors: Peter A. Losee, Y. Wang, Can Hua Li, Santosh K. Sharma, I. Bhat, T. Paul Chow, Ronald J. Gutmann
Abstract: The impact of anode layers on the electrical characteristics of 10kV 4H-SiC PiN diodes has been evaluated in this work. Co-fabricated diodes with various epitaxial anode layer designs as well as those employing P+ implanted injecting layers are used to experimentally investigate the device conduction mechanisms. The role of the injecting layer is demonstrated via electrical characteristics and numerical simulations, showing the importance of maintaining sufficient carrier recombination lifetime in the device anode region.
1003
Authors: S. Banerjee, T. Paul Chow, Ronald J. Gutmann
757
Authors: K. Chatty, V. Khemka, T. Paul Chow, Ronald J. Gutmann
1331
Authors: S. Banerjee, K. Chatty, T. Paul Chow, Ronald J. Gutmann
715
Authors: Peter A. Losee, Can Hua Li, Joseph Seiler, Robert E. Stahlbush, T. Paul Chow, I. Bhat, Ronald J. Gutmann
Abstract: 4H-SiC pin diodes fabricated on epitaxial films grown in-house on various substrates along with devices fabricated on commercial epi-material are presented. Defects have been observed using electroluminescence imaging and are correlated with device electrical performance. Most diodes fabricated with in-house epi-layers up to 25µm thick show relatively stable forward biased operation, although stacking fault propagation has been confirmed in all samples using electroluminescence imaging. Significant stacking fault propagation induced in the vicinity of testing probes has been observed and resulting design considerations are discussed.
961
Authors: Kevin Matocha, T. Paul Chow, Ronald J. Gutmann
1531
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