Papers by Author: Rong Xi Xuan

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Authors: Cheng Wang, He Ming Zhang, Rong Xi Xuan, Hui Yong Hu
Abstract: Si-based strained technology is currently an important topic of concern in the microelectronics field. The stress-induced enhancement of electron mobility contributes to the improved performance of Si-based strained devices. In this paper, Based on both the electron effective mass and the scattering rate models for strained-Si1-xGex/Si (101), an analytical electron mobility model for biaxial compressive strained-Si1-xGex /Si (101) is presented. The results show that the stress doesn’t make the electron mobility increased, but the electron mobility for [100] and [001] orientations decrease with increasing Ge fraction x, especially for [010] orientation expresses a sharp decrease. This physical phenomenon can be explained as: Although the applied stress (the higher the Ge fraction, the greater the applied stress) can enhance the electron mobility, alloy disorder scattering rate markedly increase. Overall the electron mobility decreases instead. The above result suggests that not all the mobilities for Si-based strained materials enhance with the stress applied. For the biaxial strained-SiGe material represented by Ge fraction, the effect of alloy disorder scattering on the enhancement of mobility must be concerned. The result can provide theoretical basis for the understanding of the improved physical characterizations and the enhanced mobility for Si-based strained materials.
Authors: Hui Yong Hu, Shuai Lei, He Ming Zhang, Rong Xi Xuan, Bin Shu
Abstract: Solving the Schrödinger equation with strain Hamiltonian and combining with KP theory, we obtained the conductivity effective mass and density of states effective mass of strained Si1-xGex(001) in this paper. On the basis of conductivity effective mass and density of states effective mass, considered of Fermi golden rule and Boltzman collision term approximation theory, scattering rate model was established in strained Si1-xGex(001). Based on the conductivity effective mass and scattering rate models we discussed the dependence of electron mobility on stress and doping concentration in strained Si1-xGex(001), it shows that electron mobility decrease with the increasing of stress and doping concentration. This result can provide valuable references to the research of electron mobility of strained Si1-xGex materials and the design of devices.
Authors: Jian Jun Song, He Ming Zhang, Hui Yong Hu, Xian Ying Dai, Rong Xi Xuan
Abstract: The intrinsic carrier concentration is the important parameter for researching strained Si1-xGex materials properties and evaluating Si-based strained devices parameters. In this paper, at the beginning of analyzing the band structure of strained Si1-xGex/(101)Si, the dependence of its effective densities of states for the conduction and valence bands (Nc, Nv) and its intrinsic carrier concentration (ni) on Ge fraction (x) and temperature were obtained. The results show that ni increases significantly due to the effect of strain in strained Si1-xGex/(101)Si. Furthermore, Nc and Nv decrease with increasing Ge fraction (x). In addition, it is also found that as the temperature becomes higher, the increase in Nc and Nv occurs. The results can provide valuable references to the understanding on the Si-based strained device physics and its design.
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