Papers by Author: S. Hata

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Authors: Sunao Sadamatsu, Masaki Tanaka, Kenji Higashida, Kenji Kaneko, Masatoshi Mitsuhara, S. Hata, M. Honda
Abstract: Crack tip dislocations and dislocations introduced by three point-bending tests at high temperature are observed by combinating scanning transmission electron microscopy and computed tomography (STEM-CT). Commercially available P type (001) single crystal silicon wafers were employed. A series of STEM image was acquired from -60º to +60º in tilt range with 2º in tilt step. The diffraction vector was maintained close to g(hkl) = 220 during the acquisition by adjusting the [110] direction of the sample parallel to the tilt axis of the holder. Reconstructed images of dislocations revealed dislocation structures in three-dimension.
Authors: Takayoshi Nakano, Y. Nagasawa, Yukichi Umakoshi, S. Hata, Noriyuki Kuwano, M. Itakura, Yoshitsugu Tomokiyo
Authors: S. Hata, Takayoshi Nakano, K. Higuchi, Y. Nagasawa, Noriyuki Kuwano, M. Itakura, Yoshitsugu Tomokiyo, Yukichi Umakoshi
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