Papers by Author: Simon Y.M. Chooi

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Authors: Y.S. Tan, Simon Y.M. Chooi, Chian-Yuh Sin, Ping-Yu Ee, M.P. Srinivasan, Simo Olavi Pehkonen
Authors: Simon Y.M. Chooi, Christopher Lim, Wen Jun Liu, Ping-Yu Ee
Authors: Felicia Goh, Christopher Lim, Vincent Sih, Zainab Ismail, Simon Y.M. Chooi
Abstract: Arsenic based defects were found on the surfaces of advanced CMOS patterned wafers after the pre-silicidation HF clean. Investigations into the mechanism of formation were done using representative As-implanted bare silicon, polysilicon and HDP silicon oxide films. The nature and composition of these As-based defects are believed to be arsenic and arsenic oxide. Methods of defect removal include the application of hydrogen peroxide containing solutions and hydrogen plasma dry cleaning.
Authors: Simon Y.M. Chooi, Ping-Yu Ee, B.-M. Seah, Mei Sheng Zhou
Authors: Simon Y.M. Chooi, Sang-Yee Loong, Christopher Lim, Zainab Ismail, Tjin-Tjin Tjoa
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