Papers by Author: Stefan Waffler

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Authors: Jürgen Biela, Mario Schweizer, Stefan Waffler, Benjamin Wrzecionko, Johann Walter Kolar
Abstract: Switching devices based on wide band gap materials as SiC o er a signi cant perfor- mance improvement on the switch level compared to Si devices. A well known example are SiC diodes employed e.g. in PFC converters. In this paper, the impact on the system level perfor- mance, i.e. eciency/power density, of a PFC and of a DC-DC converter resulting with the new SiC devices is evaluated based on analytical optimisation procedures and prototype systems. There, normally-on JFETs by SiCED and normally-off JFETs by SemiSouth are considered.
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