Papers by Author: Sylvie Contreras

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Authors: Jean-Louis Robert, Sylvie Contreras, Jean Camassel, Julien Pernot, Sandrine Juillaguet, Lea Di Cioccio, Thierry Billon
Authors: Jean Marie Bluet, Julien Pernot, Thierry Billon, Sylvie Contreras, J.F. Michaud, Jean-Louis Robert, Jean Camassel
Authors: N. Planes, P. Dupel, M. Ravetz, Sylvie Contreras, Patrice Vicente, Thierry Chassagne, B. Fraisse, Jean Camassel, Yves Monteil, S. Rushworth
Authors: Phillippe Godignon, Christophe Jacquier, Servane Blanqué, Josep Montserrat, Gabriel Ferro, Sylvie Contreras, Marcin Zielinski, Yves Monteil
Authors: Julien Pernot, Sylvie Contreras, Jean Camassel, Jean-Louis Robert
Abstract: We report a detailed investigation of the electrical properties of p-type 4H-SiC. In the range 100 K-800 K we show that, both, the temperature dependence of the hole concentration and Hall mobility is satisfactorily described using the relaxation time approximation. Performing a detailed comparison of in-situ vs. implantation doping, we evidence an incomplete activation of the dose (about 50 ±10 %) with apparition of a large number of compensating centres in the implanted layers.
Authors: Sylvie Contreras, Julien Pernot
Authors: V. Mosser, Sylvie Contreras, P. Lorenzini, Jean-Louis Robert
Authors: Caroline Blanc, Marcin Zielinski, Véronique Soulière, C. Sartel, Sandrine Juillaguet, Sylvie Contreras, Jean Camassel, Yves Monteil
Abstract: We report an experimental investigation of the residual (n-type) and intentional (p-type) doping level of <11-20> epitaxial layers grown on a-cut 4H-SiC substrates. Using SIMS, C(V) measurements, low temperature photoluminescence and Hall effect investigations, we show that nitrogen incorporates 3 times more than usually found for <0001> surfaces. Conversely, aluminum incorporates 8 times less. Altogether, this is in excellent agreement with previous results from stepcontrolled epitaxy.
Authors: Servane Blanqué, J. Lyonnet, Jean Camassel, R. Pérez, P. Terziyska, Sylvie Contreras, Phillippe Godignon, Narcis Mestres, Jordi Pascual
Abstract: We report a full wafer scale investigation of the activation of nitrogen and phosphorus ions co-implanted at room temperature in a 4H-SiC semi-insulating wafer. We used a full 35 mm wafers on which, after implantation and annealing, 77 reticules with Hall bars and TLM motifs were processed. We found an average sheet resistance of 531 W/square with 30 W/square standard deviation.
Authors: Servane Blanqué, R. Pérez, Narcis Mestres, Sylvie Contreras, Jean Camassel, Phillippe Godignon
Abstract: We have performed nitrogen and phosphorus co-implants at room temperature to obtain high n-type carrier concentration layers in SiC. An inductive heating RTA furnace has been used for the activation annealing. The influence of the temperature ramp parameters such as rise/decrease temperature speed and intermediate annealing steps on the dopant activation rate and surface morphology have been investigated. A reduction of the temperature ramp slope reduces the surface roughness by 50%. Inclusion of a pre-activation annealing step at low temperatures (1300°C) further reduces the surface roughness. However, the use of slower ramps or an intermediate annealing step during ramp up reduces the free carrier concentration. The faster the ramp up, the higher the activation rate and the resulting doping. We also demonstrate that the inclusion of a postactivation annealing at intermediate temperatures (1150°C) reduces significantly the surface roughness. In addition, the use of this post-annealing treatment does not degrade the activation rate nor the carrier Hall mobility, and activation rates close to 100% have been obtained.
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