Papers by Author: Tamotsu Jikimoto

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Authors: Hidekazu Tsuchida, Isaho Kamata, Tamotsu Jikimoto, Toshiyuki Miyanagi, Kunikaza Izumi
131
Authors: Isaho Kamata, Hidekazu Tsuchida, Tamotsu Jikimoto, Kunikaza Izumi
1137
Authors: Takashi Tsuji, Syunsuke Izumi, A. Ueda, Hiroyuki Fujisawa, Katsunori Ueno, Hidekazu Tsuchida, Isaho Kamata, Tamotsu Jikimoto, Kunikaza Izumi
1141
Authors: Hidekazu Tsuchida, Takashi Tsuji, Isaho Kamata, Tamotsu Jikimoto, Hiroyuki Fujisawa, Shinji Ogino, Kunikaza Izumi
131
Authors: Isaho Kamata, Hidekazu Tsuchida, Tamotsu Jikimoto, Toshiyuki Miyanagi, Kunikaza Izumi
261
Authors: Hiroyuki Fujisawa, Takashi Tsuji, Syunsuke Izumi, Katsunori Ueno, Isaho Kamata, T. Tsuchida, Tamotsu Jikimoto, Kunikaza Izumi
1297
Authors: Hidekazu Tsuchida, Isaho Kamata, Tamotsu Jikimoto, Kunikaza Izumi
171
Authors: Tomonori Nakamura, Toshiyuki Miyanagi, Hidekazu Tsuchida, Isaho Kamata, Tamotsu Jikimoto, Kunikaza Izumi
Abstract: We investigated the effect of high temperature annealing on the Schottky barrier height (Fb) and the ideality factor (n-factor) of a Mo contact. In a Mo contact, the Fb increased and the leakage current decreased by annealing at 600oC, while no increase in n-factor and forward excess current owing to the high temperature annealing was observed. The Schottky barrier diode with Mo contact annealed at 600oC showed a blocking-voltage (Vb) of 4.15 kV and a specific on resistance (Ron) of 9.07 mWcm2, achieving a high Vb 2/Ron value of 1898 MW/cm2.
721
Authors: Tamotsu Jikimoto, Hidekazu Tsuchida, Isaho Kamata, Kunikaza Izumi
709
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