Papers by Author: Thierry Chassagne

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Authors: P. Dupel, Thierry Chassagne, Didier Chaussende, Yves Monteil, François Cauwet, Etienne Bustarret, A. Deneuville, G. Bentoumi, Eugénie Martinez, B. Daudin, G. Feuillet
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Authors: Jean François Michaud, Marc Portail, Thierry Chassagne, Marcin Zielinski, Daniel Alquier
Abstract: The aim of this paper is to review the recent developments conducted by our groups for the achievement of 3C-SiC based heterostructures compatible for MEMS applications. It deals with different aspects, from the influence of the defects generated at the 3C-SiC/Si interface on the mechanical properties to the elaboration of new multilayered structures, required for specific applications like, for example, Atomic Force Microscopy.
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Authors: Teddy Robert, Sandrine Juillaguet, Maya Marinova, Thierry Chassagne, Ioannis Tsiaousis, N. Frangis, Efstathios K. Polychroniadis, Jean Camassel
Abstract: The electronic structure of in-grown 8H stacking faults in 4H-SiC matrix has been investigated in detail. After assessment of the structural properties by high resolution transmission electron microscopy, we focus on the electronic structure. We show that one unit cell of 8H does not behave like a single type-II quantum well but, rather, like two type-II quantum wells of 3C coupled by a thin hexagonal barrier. Using a transfer matrix method, we compute the corresponding transition energies, taking into account the effect of the valence band offset and built-in electric field. A good agreement is found with the experimental data collected from low temperature photoluminescence spectroscopy.
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Authors: Marcin Zielinski, Marc Portail, Thierry Chassagne, Sandrine Juillaguet, Hervé Peyre, André Leycuras, Jean Camassel
Abstract: We report on recent advances in liquid phase epitaxial (LPE) conversion of a bulk Si wafer into self standing 3C-SiC. This includes the role of the stress control within the (100) oriented “crucibles”, the elaboration of crack-free (111) “crucibles” and the successful conversion of (100) and (111) oriented Si wafer. To date up to 100µm thick 3C-SiC(100) as well as 30µm thick crack-free 3C-SiC (111) materials have been obtained. The growth rate ranges from 20 to 100µm/h and locally can even reach ~1mm/h. In this work we focus on the structural, morphological and optical properties of the LPE-grown material.
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Authors: Marcin Zielinski, Jean François Michaud, S. Jiao, Thierry Chassagne, Anne Elisabeth Bazin, A. Michon, Marc Portail, Daniel Alquier
Abstract: In this work we analyze the static behavior of cantilevers elaborated on the basis of 3C SiC thin films grown by chemical vapor deposition on (100) and (111) oriented silicon substrates. A direct microscope observation of cantilever bending indicates the opposite sign of stress gradient (respectively negative and positive) for both film orientations. The correlation of this observation with the commonly admitted nature of intrinsic stress for each orientation (respectively compressive and tensile) leads us to an unexpected conclusion: instead of relaxing, the absolute value of the intrinsic stress increases from the interface to the layer surface. We propose an analytical model that could explain this phenomenon.
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Authors: N. Planes, P. Dupel, M. Ravetz, Sylvie Contreras, Patrice Vicente, Thierry Chassagne, B. Fraisse, Jean Camassel, Yves Monteil, S. Rushworth
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Authors: Thierry Chassagne, Gabriel Ferro, H. Haas, André Leycuras, Hugues Mank, Yves Monteil
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Authors: Sylvie Contreras, Leszek Konczewicz, Roxana Arvinte, Jaweb Ben Messaoud, Tian Lin Wang, Hervé Peyre, Thierry Chassagne, Marcin Zielinski, Sandrine Juillaguet
Abstract: Comparative study of p-type 4H-SiC epitaxial layers grown simultaneously on two different 4H-SiC substrates, namely n-type and semi-insulating have been done by different structural, optical and electrical experimental techniques.
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Authors: Marc Portail, Adrien Michon, Stephane Vézian, Denis Lefebvre, Sébastien Chenot, Abdelkarim Ouerghi, Marcin Zielinski, Thierry Chassagne, Yvon Cordier
Abstract: Structural and electrical properties of graphene elaborated on 3C-SiC(111)/Si and 3C-SiC(100)/Si templates, using propane-argon gas mixtures under CVD environment, are presented. On 3C-SiC(111), the graphitic phase is clearly attributable to graphene and presents good electrical conductivity at the macroscopic scale. The opposite case is observed on 3C-SiC(100), for which the graphitic phase develops more rapidly but with a high degree of disorientation. The graphitization, which can be coupled with 3C-SiC growth stage, is efficient over the whole surface of 2’’ wafer and allows to elaborate, in a single process, Graphene on Silicon wafers.
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Authors: Roy Dagher, Benoit Jouault, Matthieu Paillet, Maxime Bayle, Luan Nguyen, Marc Portail, Marcin Zielinski, Thierry Chassagne, Yvon Cordier, Adrien Michon
Abstract: In this study we report the growth of graphene on different silicon carbide substrates by chemical vapor deposition (CVD) in order to understand the influence of the substrate offcut on the graphene layers. For this purpose, graphene was grown on substrates with different offcuts, under hydrogen-argon atmosphere, and analyzed using AFM, LEED and Raman spectroscopy. We discuss the morphology and strain in graphene, and finally the ideal offcut for graphene growth.
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