Papers by Author: Toshinori Taishi

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Authors: Koki Suzuki, Koang Yong Hyun, Toshinori Taishi
Abstract: We have succeeded in solution growth of SiC from Cr solvent without Si using ceramic SiC as the SiC source. The effect of the growth conditions, such as the liquid height in the crucible, on the crystal quality in solution growth of SiC from Cr solvent was investigated. For a liquid height in the crucible of up to 10 mm, the growth rate increases with increasing liquid height and the SiC crystals are a single polytype, while the growth rate decreases and the crystals are polycrystalline for a liquid height above 10 mm. In the former case, the balance between dissolution and transportation of the solute are comparable. The latter case is expected to be transportation limited because transportation of free C and Si atoms is inhibited by excrescent crystals in solution and the increase in the distance for solute transportation. In addition, a higher growth temperature leads to growth of only 4H-SiC.
Authors: Koang Yong Hyun, Toshinori Taishi, Koki Suzuki, Katsuya Teshima
Abstract: Si0.56Cr0.4M0.04 (M = Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Rh, and Pd) solvents were investigated to identify new multi-component materials in which carbon is highly soluble, because solubility is a key parameter in solution growth of SiC. The solubility of carbon in Si0.56Cr0.4Co0.04 was 8.37 at%, the highest value among the tested multi-component materials. This is about 2.5 times the solubility of carbon in Si0.6Cr0.4. These results show that addition of a small amount of a transition metal enhanced the solubility of carbon in Si0.6Cr0.4. This technique for determining carbon solubility is effective for investigating crystal growth using solvents with several components, for which complex thermodynamic calculations are necessary.
Authors: Toshinori Taishi, Masaru Takahashi, Naomichi Tsuchimoto, Koki Suzuki, Koang Yong Hyun
Abstract: SiC crystals are grown using a Si-Cr-based solvent by a top-seeded solution growth (TSSG) method by changing the dipping time after when the growth temperature is reached. Step-flow-like curve morphologies were observed for a dipping time after 15 min, while polycrystallization occurred at the periphery for that after 120 min, which corresponded to the dipping under unsaturated and supersaturated carbon in the solvent, respectively. Furthermore, the solution growth of SiC with dipping under unsaturated carbon was easily realized by the growth from the crucible bottom, step-flow-like growth was achieved. Using this technique, dominant polytypes of SiC in various growth conditions after stable seed dipping under the unsaturation in the solvent can be demonstrated.
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