Papers by Author: Zong You Yin

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Authors: Zong You Yin, Xiao Hong Tang, Ji Xuan Zhang, Deny Sentosa, Jing Hua Teng, An Yan Du, Mee Koy Chin
Abstract: Morphology and crystal-quality of InAs/In0.53Ga0.47As/InP quantum dots (QDs) grown by metal-organic vapor phase epitaxy (MOVPE) in N2 ambient using different growth modes have been studied. It is found that the morphology and crystal-quality of InAs QDs are dependant on the growth modes. After optimizing the dots’ growth modes, dots’ size dispersion and crystal-quality are both improved greatly, resulting in the enhancement factor of ∼ 2.9 in the photoluminescence (PL) peak-intensity from single QD. When the dots are buried, the dot size decrease compared with the free-standing dots due to the soon capping layer deposition during dots’ being buried. The thermal activation energy measured is comparable to the valence-band offset in the QD system calculated by 8 kp theory model. This indicates the PL quenching induced by the interface defects is suppressed due to the defect density lowering in the QDs grown by such optimized growth mode.
Authors: Deny Sentosa, Xiao Hong Tang, Soo Jin Chua, Zong You Yin
Abstract: Photoluminescence (PL) measurement shows an additional peak with stronger and broader emission at lower photon energy besides the energy band gap transition emission from GaNAs epilayer grown by MOCVD. This emission is assigned as nitrogen-nitrogen interstitial defect related emission. Effect of V/III ratio during the MOCVD growth on this defect related emission peak has been investigated. The combination of optimum V/III ratio during the MOCVD growth and post-growth rapid thermal anneal (RTA) can eliminate this defect emission peak and at the same time the GaNAs’ band gap emission has been greatly improved. The PL spectra contain a single, narrow, and high intensity GaNAs’ band gap transition emission after the RTA annealing. The optimum V/III ratio for growing the GaNAs films with N content < 3.5% is around 20.
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