Papers by Author: A.J. Hydes

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Authors: Praneet Bhatnagar, Nicolas G. Wright, Alton B. Horsfall, C. Mark Johnson, Michael J. Uren, Keith P. Hilton, A.G. Munday, A.J. Hydes

Abstract: Silicon Carbide (SiC) power devices are increasingly in demand for operations which require ambient temperature over 300°C. This paper...

987
Authors: Praneet Bhatnagar, Nicolas G. Wright, Alton B. Horsfall, Konstantin Vassilevski, C. Mark Johnson, Michael J. Uren, Keith P. Hilton, A.G. Munday, A.J. Hydes

Abstract: 4H-SiC depletion mode (normally-on) VJFETs were fabricated and characterised at temperatures up to 377 °C. The device current density at...

799
Authors: Konstantin Vassilevski, Irina P. Nikitina, Praneet Bhatnagar, Alton B. Horsfall, Nicolas G. Wright, Anthony G. O'Neill, Michael J. Uren, Keith P. Hilton, A.G. Munday, A.J. Hydes, C. Mark Johnson

Abstract: 4H-SiC diodes with nickel silicide (Ni2Si) and molybdenum (Mo) Schottky contacts have been fabricated and characterised at temperature up...

931
Authors: Konstantin Vassilevski, Irina P. Nikitina, Alton B. Horsfall, Nicolas G. Wright, Anthony G. O'Neill, Keith P. Hilton, A.G. Munday, A.J. Hydes, Michael J. Uren, C. Mark Johnson

Abstract: High voltage 4H-SiC Schottky diodes with single-zone junction termination extension (JTE) have been fabricated and characterised....

873
Authors: Konstantin Vassilevski, Keith P. Hilton, Nicolas G. Wright, Michael J. Uren, A.G. Munday, Irina P. Nikitina, A.J. Hydes, Alton B. Horsfall, C. Mark Johnson

Abstract: Trenched and implanted vertical JFETs (TI-VJFETs) with blocking voltages of 700 V were fabricated on commercial 4H-SiC epitaxial wafers....

1063
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