Papers by Author: Alton B. Horsfall

Paper TitlePage

Authors: Konstantin Vassilevski, Irina P. Nikitina, Alton B. Horsfall, Nicolas G. Wright, C. Mark Johnson

Abstract: 3.3 kV rated 4H-SiC diodes with nickel monosilicide Schottky contacts and 2-zone JTE regions were fabricated on commercial epitaxial wafers...

555
Authors: Konstantin Vassilevski, Irina P. Nikitina, Alton B. Horsfall, Nicolas G. Wright, C. Mark Johnson

Abstract: 4H-SiC diodes with 0.60 mm2 nickel silicide Schottky contacts were fabricated on commercial epitaxial layers. At room temperature, the...

897
Authors: Konstantin Vassilevski, Alton B. Horsfall, C. Mark Johnson, Nicolas G. Wright, Anthony G. O'Neill
1145
Authors: Nicolas G. Wright, Konstantin Vassilevski, Irina P. Nikitina, Alton B. Horsfall, C. Mark Johnson, Praneet Bhatnagar, Peter Tappin

Abstract: New results are presented of a surface trench defect observed during anneal of room temperature Al implants. The size of the surface defect...

613
Authors: Daniel Brennan, Bing Miao, Konstantin Vassilevski, Nicolas G. Wright, Alton B. Horsfall

Abstract: This work presents the amplitude modulation radio transmission system for communications in hostile environments. The commissioning of a...

953
Authors: Praneet Bhatnagar, Alton B. Horsfall, Nicolas G. Wright, C. Mark Johnson, Konstantin Vassilevski, Anthony G. O'Neill

Abstract: Physics-based analytical models are seen as an efficient way of predicting the characteristics of power devices since they can achieve high...

1195
Authors: Nicolas G. Wright, C. Mark Johnson, Alton B. Horsfall, Cyril Buttay, Konstantin Vassilevski, W.S. Loh, R. Skuriat, P. Agyakwa

Abstract: The adoption of SiC devices as a viable technology depends crucially on maximising the potential advantages of the material. This is best...

919
Authors: Nicolas G. Wright, N. Poolamai, Konstantin Vassilevski, Alton B. Horsfall, C. Mark Johnson
1433
Authors: C. Blasciuc-Dimitriu, Alton B. Horsfall, Konstantin Vassilevski, C. Mark Johnson, Nicolas G. Wright, Anthony G. O'Neill
823
Authors: Lucy Claire Martin, David T. Clark, E.P. Ramsay, A.E. Murphy, R.F. Thompson, Dave A. Smith, R.A.R. Young, Jennifer D. Cormack, Nicholas G. Wright, Alton B. Horsfall

Abstract: The development of silicon carbide complimentary metal-oxide-semiconductor (CMOS) is a key-enabling step in the realisation of low power...

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