Papers by Author: Andrzej Misiuk

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Authors: Valentin V. Emtsev, Boris A. Andreev, Gagik A. Oganesyan, D.I. Kryzhkov, Andrzej Misiuk, Charalamos A. Londos, M.S. Potsidi
Abstract: Effects of compressive stress on oxygen agglomeration processes in Czochralski grown silicon heat treated at T= 450OC, used as a reference temperature, and T= 600OC to 800OC are investigated in some detail. Compressive stresses of about P= 1 GPa lead to enhanced formation of Thermal Double Donors in materials annealed over a temperature range of T= 450OC – 600OC. It has been shown that the formation of thermal donors at T= 450OC under normal conditions and compressive stress is accompanied with loss of substitutional boron. In contrast, the concentration of the shallow acceptor states of substitutional boron in silicon annealed under stress at T≥ 600OC remains constant. An enhancement effect of thermal donor formation is gradually weakened at T≥ 700OC. The oxygen diffusivity sensitive to mechanical stress is believed to be responsible for the observed effects in heat-treated silicon.
181
Authors: Charalamos A. Londos, M. Potsidou, Andrzej Misiuk, I.V. Antonova
249
Authors: Andrzej Misiuk, Alexander G. Ulyashin, Adam Barcz, Peter Formanek
Abstract: Accumulation of hydrogen in Czochralski silicon implanted with N2+ (Si:N; N dose, DN=1–1.8x1018 cm-2; energy E=140 keV) or O2+ (Si:O; DO=1x1017 cm-2; E=200 keV), processed at up to 1400 K (HT) under enhanced Ar pressure, up to 1.2 GPa (HP), and followed by treatment in hydrogen (deuterium) plasma, was investigated by Secondary Ion Mass Spectroscopy. Implantation produces buried amorphous layer. As determined by transmission electron microscopy, subsequent HT-HP processing results in a formation of a specific sample microstructure. In plasma treated as-implanted Si:N, hydrogen accumulates at a depth of about 50 nm, up to concentration 2x1021 cm-3. This concentration is twice lower at a depth ≈ 80–250 nm. Deuterium content remains almost unchanged after plasma treatment of Si:N prepared by processing at 1270 K while it is strongly dependent on DN and on HP. In plasma treated Si:O, prepared by processing at 920-1230 K, hydrogen profile corresponds to that of implanted oxygen and decreases with HP. Comparative analysis of hydrogen accumulation and its subsequent release at 720-920 K in the Si:N and Si:O structures indicates that the capacity of buried layers in Si:O to getter and to preserve hydrogen is higher than that in Si:N.
319
Authors: Ida E. Tyschenko, L. Rebohle, A.B. Talochkin, B.A. Kolesov, M. Voelskow, Andrzej Misiuk, Wolfgang Skorupa
607
Authors: Andrzej Misiuk, Barbara Surma, Jadwiga Bak-Misiuk, Vito Raineri
Abstract: The effect of treatment at up to 1400 K (HT) under enhanced hydrostatic pressure (HP, up to 1.2 GPa) on helium implanted single crystalline silicon (Si:He, He ion dose up to 6x1017cm-2, energy up to 300 keV) has been investigated by transmission electron microscopy, secondary ion mass spectrometry, photoluminescence and X-Ray methods. The treatment of Si:He at ≤ 920 K - HP results in a formation of buried nano-structured layers containing helium filled cavities/bubbles and numerous extended defects; many less dislocations are created at ≥ 1270 K in Si:He treated under HP. HP affects the recrystallization of amorphous Si, diffusivity of implanted He and of implantation-induced defects and thus promotes the creation of more but smaller He-filled cavities/bubbles as well as other defects near the range of implanted He+.
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Authors: E.A. Steinman, A.N. Tereshchenko, V.I. Vdovin, Andrzej Misiuk
Abstract: The samples of Cz Si were subjected to multi-step annealing at different temperatures. After high temperature consequent steps the dislocation related spectra (DRL) were detected from the samples. The main feature of the DRL spectra was the very narrow low energy bands D1/D2, which are unusual for Cz Si. TEM analysis shown that the only candidates for DRL spectra are dislocation loops, punched out from precipitates. To explain the absence of influence of oxygen it was assumed that the distribution of interstitial oxygen is nonuniform in such samples and has some depletion regions in the vicinity of precipitates.
773
Authors: Andrzej Misiuk, H.B. Surma, I.V. Antonova, V.P. Popov, Jadwiga Bak-Misiuk, M. Lopez, A. Romano-Rodríguez, Adam Barcz, J. Jun
345
Authors: Andrzej Misiuk, Adam Barcz, Jacek Ratajczak, Jadwiga Bak-Misiuk
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Authors: Jadwiga Bak-Misiuk, Andrzej Misiuk, Artem Shalimov, Jacek Ratajczak, Barbara Surma, G. Gawlik
343
Authors: Andrzej Misiuk, W. Jung, Barbara Surma, J. Jun, M. Rozental
393
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