Papers by Author: Béla Pécz

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Authors: Zs. Makkai, Béla Pécz, M.A. di Forte-Poisson, F. Huet
803
Authors: J. Stoemenos, Béla Pécz, V. Heera
881
Authors: Zsolt E. Horváth, B. Kovács, M. Németh-Sallay, Béla Pécz
99
Authors: Andrey O. Konstantinov, Qamar-ul Wahab, Christer Hallin, Chris I. Harris, Béla Pécz
1025
Authors: Béla Pécz, O. Klettke, Gerhard Pensl, J. Stoemenos
961
Authors: V. Heera, Wolfgang Skorupa, J. Stoemenos, Béla Pécz
579
Authors: László S. Tóth, Béla Pécz, Zsolt Czigány, K. Amimer, A. Georgakilas
999
Authors: Olivier Noblanc, C. Arnodof, S. Cassette, Christian Brylinski, A. Kakanakova-Georgieva, Ts. Marinova, Liliana Kassamakova, R. Kabanakov, Béla Pécz, A. Sulyok, György Z. Radnóczi
817
Authors: Giovanni Attolini, Matteo Bosi, Francesca Rossi, Bernard Enrico Watts, Giancarlo Salviati, Gábor Battistig, László Dobos, Béla Pécz
Abstract: 3C-SiC films were grown on Si by VPE using CBr4 as the carbon source, at temperatures ranging between 1100 to 1250°C. XRD, TEM, AFM, and SEM results indicate that the epitaxy proceeds as a 3D growth of uncoalesced islands at low temperature, whereas a continuous layer with hillocks on top is obtained above 1200°C. The shape and faceting of the islands are analyzed by AFM, showing (311) preferred facets.
139
Authors: Béla Pécz, M.A. di Forte-Poisson, L. Tóth, György Z. Radnóczi
1255
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