Papers by Author: Brenda L. VanMil

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Authors: Jian Hui Zhang, Leonid Fursin, Xue Qing Li, Xiao Hui Wang, Jian H. Zhao, Brenda L. VanMil, Rachael L. Myers-Ward, Charles R. Eddy, D. Kurt Gaskill

Abstract: This work reports 4H-SiC bipolar junction transistor (BJT) results based upon our first intentionally graded base BJT wafer with both base...

829
Authors: Jun Hu, Xiao Bin Xin, Petre Alexandrov, Jian H. Zhao, Brenda L. VanMil, D. Kurt Gaskill, Kok Keong Lew, Rachael L. Myers-Ward, Charles R. Eddy

Abstract: This paper reports a 4H-SiC single photo avalanche diode (SPAD) operating at the solar blind wavelength of 280 nm. The SPAD has an...

1203
Authors: Robert E. Stahlbush, Rachael L. Myers-Ward, Brenda L. VanMil, D. Kurt Gaskill, Charles R. Eddy

Abstract: The recently developed technique of UVPL imaging has been used to track the path of basal plane dislocations (BPDs) in SiC epitaxial layers....

271
Authors: Brenda L. VanMil, Robert E. Stahlbush, Rachael L. Myers-Ward, Yoosuf N. Picard, S.A. Kitt, J.M. McCrate, S.L. Katz, D. Kurt Gaskill, Charles R. Eddy

Abstract: Conversion of basal plane dislocations (BPD) to threading edge dislocations (TED) in 8° off-cut 4H-SiC within an n+ buffer layer would...

61
Authors: D. Kurt Gaskill, Michael A. Mastro, Kok Keong Lew, Brenda L. VanMil, Rachael L. Myers-Ward, Ronald T. Holm, Charles R. Eddy

Abstract: A set of three 4H-SiC wafers with manufacturer specified micropipe density of 0-5 cm-2 were characterized by x-ray diffraction (XRD) maps...

235
Authors: Virginia D. Wheeler, Brenda L. VanMil, Rachael L. Myers-Ward, S. Chung, Yoosuf N. Picard, Marek Skowronski, Robert E. Stahlbush, Nadeemullah A. Mahadik, Charles R. Eddy, D. Kurt Gaskill

Abstract: The effectiveness of an in-situ growth interrupt in nitrogen doped 8° off-cut epilayers was investigated using ultraviolet photoluminescence...

63
Authors: Kok Keong Lew, Brenda L. VanMil, Rachael L. Myers-Ward, Ronald T. Holm, Charles R. Eddy, D. Kurt Gaskill

Abstract: Hydrogen etching of 4H-SiC has been performed in a hot-wall chemical vapor deposition reactor to reduce surface damage and to create a...

513
Authors: Robert E. Stahlbush, Brenda L. VanMil, Kendrick X. Liu, Kok Keong Lew, Rachael L. Myers-Ward, D. Kurt Gaskill, Charles R. Eddy, X. Zhang, Marek Skowronski

Abstract: The evolution of basal plane dislocations (BPDs) in 4H-SiC epitaxy during its growth is investigated by using two types of interrupted...

317
Authors: Brenda L. VanMil, Rachael L. Myers-Ward, Joseph L. Tedesco, Charles R. Eddy, Glenn G. Jernigan, James C. Culbertson, Paul M. Campbell, J.M. McCrate, S.A. Kitt, D. Kurt Gaskill

Abstract: Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under...

211
Authors: Rachael L. Myers-Ward, Kok Keong Lew, Brenda L. VanMil, Robert E. Stahlbush, Kendrick X. Liu, Joshua D. Caldwell, Paul B. Klein, Ping Wu, Mohammad Fatemi, Charles R. Eddy, D. Kurt Gaskill

Abstract: X-ray diffraction (XRD) rocking curves were mapped across 4H-SiC, 3-inch, 8° off-cut substrates prior to and after epitaxial growth, where...

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