Papers by Author: Carl Mikael Zetterling

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Authors: Arash Salemi, Hossein Elahipanah, Carl Mikael Zetterling, Mikael Östling

Abstract: Implantation-free mesa etched 10+ kV 4H-SiC PiN diodes are fabricated, measured and analyzed by device simulation. An area-optimized...

423
Authors: Hyung Seok Lee, Martin Domeij, Carl Mikael Zetterling, Reza Ghandi, Mikael Östling, Fredrik Allerstam, Einar Ö. Sveinbjörnsson

Abstract: This paper reports a 4H-SiC bipolar junction transistor (BJT) with a breakdown voltage (BVCEO) of 1200 V, a maximum current gain (β) of 60...

1151
Authors: Hossein Elahipanah, Arash Salemi, Carl Mikael Zetterling, Mikael Östling

Abstract: A single-mask junction termination extension withtrench structures is formed to realize a 4.5 kV implantation-free 4H-SiCbipolar junction...

838
Authors: Hirofumi Nagatsuma, Shin Ichiro Kuroki, Milantha de Silva, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Takamaro Kikkawa, Mikael Östling, Carl Mikael Zetterling

Abstract: 4H-SiC nMOSFETs with As-doped S/D and NbNi silicide ohmic contacts were demonstrated for radiation-hard CMOS electronics. The threshold...

573
Authors: Shuoben Hou, Per Erik Hellström, Carl Mikael Zetterling, Mikael Östling

Abstract: An in-house fabricated 4H-SiC PIN diode that has both optical sensing and temperature sensing functions from room temperature (RT) to 550 °C...

630
Authors: Hyung Seok Lee, Martin Domeij, Carl Mikael Zetterling, Mikael Östling

Abstract: 4H-SiC BJTs have been fabricated with varying geometrical designs. The maximum value of the current gain was about 30 at IC=85 mA, VCE=14 V...

767
Authors: Shin Ichiro Kuroki, Tatsuya Kurose, Hirofumi Nagatsuma, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Takamaro Kikkawa, Takahiro Makino, Takeshi Ohshima, Mikael Östling, Carl Mikael Zetterling

Abstract: For logic gate with higher voltage swing, 4H-SiC pseudo-CMOS logic inverter with four nMOS was suggested and demonstrated, and a high...

669
Authors: Fanny Dahlquist, J.O. Svedberg, Carl Mikael Zetterling, Mikael Östling, Bo Breitholtz, H. Lendenmann
1179
Authors: Erik Danielsson, Martin Domeij, Hyung Seok Lee, Carl Mikael Zetterling, Mikael Östling, Adolf Schöner, Christer Hallin

Abstract: 4H-SiC BJTs were fabricated using epitaxial regrowth instead of ion implantation to form a highly doped extrinsic base layer necessary for a...

905
Authors: Ye Tian, Luigia Lanni, Ana Rusu, Carl Mikael Zetterling

Abstract: This paper presents a monolithic 4H-SiC BJT latched emitter-coupled logic (ECL) comparator for high temperature analog-to-digital...

921
Showing 1 to 10 of 58 Paper Titles