Papers by Author: Chong Qing Huang

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Authors: X.A. Mei, Min Chen, W.K. An, Chong Qing Huang, J. Liu, A.H. Cai
Abstract: Pr-doped bismuth titanate (BixPryTi3O12: BPT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and Raman spectra of the films were investigated. XRD studies indicated that all of the BPT films consist of single phase of a bismuth-layered structure, showing a highly (117) oriented preferential growth with a minor fraction of (00l) orientation. For an increasing degree of Pr doping, Raman spectra studies revealed a substantial hardening of the vibration involving Bi atoms at the perovskite A site, whereas the Bi mode at the Bi2O2 layer is negligibly changed. From a comparison with a simple mass consideration, we identify a precise cation distribution, indicating a pronounced site selectivity of Pr ions for the A site for y ~ 1.2.
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Authors: Min Chen, W.K. An, A.H. Cai, Chong Qing Huang, K.L. Su, J. Liu
Abstract: The electrical properties and Microstructures of Tb-doped bismuth titanate (Bi3.3Tb0.6Ti3O12) ceramic were investigated. XRD analyses revealed that the sample had Bi-layered perovskite structure. SEM micrographs showed randomly oriented and plate-like morphology. The remanent polarization (Pr) and coercive field (Ec) of Bi3.3Tb0.6Ti3O12 ceramic are above 25 μC/cm2 and 80 KV/cm, respectively.
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Authors: Chong Qing Huang, M. Chen, X.A. Mei, Y.H. Sun, J. Liu
Abstract: Bi2WTi3O12 ceramics are fabricated by conventional solid-state reaction process. XRD analysis reveals that Bi2WO6 is the main phase and Bi4Ti3O12 is the second phase. With increasing temperature the sample first appears metallic behavior, then strong electrical fluctuations above 100°C, and finally exhibits stable nonlinear properties characterized by semiconductivity above 300°C at low field (E ≤ 100V/mm). The Arrhenius law for electrical conductivity by thermal activation is not suitable to explain the anomalous results. Based on the phase transition of tungsten trioxide from room temperature to about 300°C, the electrical properties of Bi2WTi3O12 ceramics can be explained.
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Authors: Min Chen, X.A. Mei, A.H. Cai, J. Liu, Chong Qing Huang
Abstract: The electrical properties of Ce-doped bismuth titanate, Bi4-xCexTi3O12 (BCT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.4 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-E hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.6 and 0.8 the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BCT ceramic with x=0.8 were above 20μC/cm2 and 60KV/cm , respectively.
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Authors: S. Chen, A.H. Cai, X.A. Mei, Chong Qing Huang, W.K. An, Min Chen
Abstract: Sm-doped bismuth titanate and random oriented Bi4-xCexTi3O12 (BCT) thin films were fabricated on Pt/Ti/SiO2/Si substrates rf magnetron sputtering technique. The structures and the ferroelectric properties of the films were investigated. Ce doping leads to a marked improvement in the remanent polarization (Pr) and the coercive field (Ec). At the applied electric field of 100 kV/cm, Pr and Ec of the BCT (x = 0.8) film annealed at 650 oC are 20.5 μC/cm2 and 60 KV/cm, respectively. However, after 3 × 1010 switching cycles, 20% degradation of 2Pr is observed in the film.
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Authors: Min Chen, X.A. Mei, A.H. Cai, J. Liu, Chong Qing Huang
Abstract: Dy2O3-doped bismuth titanate (Bi4-xDyxTi3O12: BDT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BDT films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization (Pr) and coercive field (Ec) of the BDT Film with x = 0.8 were 20 μC/cm2 and 60 KV/cm, respectively. After 3 × 1010 switching cycles, 20% degradation of Pr is observed in the film.
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Authors: Min Chen, X.A. Mei, J. G. Liu, J. Liu, Chong Qing Huang
Abstract: The electrical properties of Eu-doped bismuth titanate,Bi4-xEuxTi3O12 (BET) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.4 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.6 and 0.8 the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BST ceramic with x=0.8 were above 16μC/cm2 and 70KV/cm , respectively.
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Authors: Min Chen, X.A. Mei, A.H. Cai, J. Liu, Chong Qing Huang
Abstract: Eu2O3-doped bismuth titanate (Bi4-xEuxTi3O12: BET) thin films with random oriention were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BET films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the BET Film with x=0.8 were 20μC/cm2 and 65KV/cm , respectively. After 3×1010 switching cycles, 15% degradation of Pr is observed in the film.
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Authors: J. Liu, Min Chen, X.A. Mei, Y.H. Sun, Chong Qing Huang
Abstract: The electrical properties of Gd-doped bismuth titanates Bi4-xGdxTi3O12) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Gd-doped sample exhibits a negative differential resistance behavior. The conducting filamentary model has been used to explain the negative differential resistance phenomenon in Gd-doped bismuth titanates. The impedance spectrum of Gd sample indicates that both consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 and the distribution of every element is uniform. Gd-doped sample exhibites randomly oriented and plate-like morphology.
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Authors: X.B. Liu, Y.H. Sun, Min Chen, Chong Qing Huang, J. Liu, Z.M. Wan
Abstract: The electrical properties of Gd-doped bismuth titanates (Bi3.25Gd0.75Ti3O12, BGT) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of the BGT ceramic exhibits a negative differential resistance behavior. The impedance spectrum indicates that the sample consists of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 (BIT) and the distribution of every element is uniform. The BGT sample exhibits randomly oriented and plate-like morphology.
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