Papers by Author: Dong Ming Guo

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Authors: Feng Wei Huo, Zhu Ji Jin, Ren Ke Kang, Dong Ming Guo
Abstract: A new non-destructive method was developed to identify the grinding mode of silicon wafers, which is based on the information of subsurface cracks extracted from the surface topography of the ground silicon wafers measured with a 3D surface profiler. We examined extensive measurement data of the surface topography of silicon wafers processed by single grain grinding or real grinding operation, and our results show that the information about median cracks could be captured if the lateral sampling interval of the 3D surface profiler is small enough, even if the grain depth of cut is below 20nm. If the maximum valley of the measured surface topography is approximately equal to the grain depth of cut, surface formation will be under ductile mode, whereas, if the maximum valley is several times larger than the grain depth of cut, surface formation will be under brittle mode. According to this criterion, silicon wafers ground by ductile mode or brittle mode could be identified rapidly and conveniently. Experimental validation shows that this method is accurate.
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Authors: Yu Hui Sun, Ren Ke Kang, Dong Ming Guo
Abstract: LCOS panel as a kind of new LCD is a sort of liquid crystal display device that operates in a reflective mode. In this paper, a method on realising planarization in large scale liquid crystal on silicon with chemical mechanical polishing (CMP) technology is discussed in detail. The nonuniform distributions of polishing pressure and the relative speed between the wafer and the polishing pad are main factors affecting the within-wafer non-uniformity. This research integrated a physical mixed model of chemical-mechanical polishing that combineed the effects of polishing pad roughness and slurry hydrodynamic pressure. Based on the contact mechanics and modified Reynolds equation, the asperity contact and fluid flow pressures were calculated. Taking into account the effects of kinematic parameters, the material removal rate(MRR) on silicon panel front surface was obtained. In the last section the design of a schematic carrier with multi-zone, in which the compensation back pressure can be applied, is presented. The model and the design can be used for providing theoretical guide to the development of CMP equipments and selection of the kinematic variables in CMP process.
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Authors: Zhen Yuan Jia, T. Ji, Dong Ming Guo, Gui Hong Bian
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Authors: Ren Ke Kang, Xiao Guang Guo, Dong Ming Guo, Zhu Ji Jin
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Authors: J.Y. Liu, Dong Ming Guo, Zhu Ji Jin, Ren Ke Kang
Abstract: The lubrication properties of the slurry between the silicon wafer and the pad in chemical mechanical polishing (CMP) are critical to the planarity of the silicon wafer. The effects of porous pad and suspending abrasives on the slurry film beneath the wafer become more prominent as the size of the silicon wafer becomes bigger. In order to explore the effects of porous pad and suspending abrasives on the lubrication properties of the slurry, a three-dimensional lubrication model based on the micropolar fluid theory and Darcy’s law is developed. The effects of the nanometer abrasives and the porosity of the pad on the lubrication of the slurry film between the silicon wafer and the pad are discussed.
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Authors: Jian Xiu Su, Yin Xia Zhang, Xi Qu Chen, Bin Feng Yang, Dong Ming Guo
Abstract: The components of material removal in wafer Chemical mechanical polishing (CMP) was described qualitatively based on theory of corrosive wear. The value of each component was obtained by a series of wafer CMP experiments. According to analyzing the experiment results, some conclusions are obtained as follows. There is an optimum polish velocity in wafer CMP at a certain parameter. Under the optimum velocity, the balance of interaction between the mechanical action and the chemical action is reached and the material removal rate approaches maximum. The wafer CMP is a changeful and dynamic process. It cannot be obtained ideal effect of material removal by increasing the mechanical action or chemical action only. The MRR in wafer CMP mainly depends on the interaction result between the mechanical action and the chemical action and the interaction made by abrasives is a decisive part. These results provide a theoretical guide to further understanding the material removal mechanism in wafer CMP.
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Authors: Dong Ming Guo, C.L. Sun, H. Gao, L.H. Zou
Abstract: An extended Time Petri Net with condition information (ECTPN) is presented in this paper including two new attributes associated to place and transition that respectively represent input condition set and output condition set. Using the model can achieve multitask cooperation and competition and let token be able to select next transaction path according to inner information. Firstly, the Time Petri Net is introduced, and then a formal semantic meaning for ECTPN in terms of input and output items is defined. Finally, we give the denotation of ECTPN. Application shows that the ECTPN validate by using business modeling.
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Authors: Jian Xiu Su, Xi Qu Chen, Jia Xi Du, Dong Ming Guo, Ren Ke Kang
Abstract: Chemical mechanical polishing (CMP) has already become a mainstream technology in global planarization of wafer. The nonuniformity of material removal on wafer surface has a main influence on surface profile of silicon wafer in CMP process. However, the formation mechanism of nonuniformity in wafer CMP has not been fully understood and the influences of CMP process variables on nonuniformity are not fully clear. The nonuniformity of material removal on wafer surface has not been fully understood and the influences of CMP process variables on nonuniformity are not fully clear in CMP process. In this paper, firstly, the equation of particle movement trajectories on wafer surface was built by the movement relationship between the wafer and the polishing pad on a single head CMP machine with line oscillation of carrier. Then the distribution of abrasive trajectories on wafer surface was analyzed at different rotational speed. By the analysis, the relationship between the movement variables of the CMP machine and the With-In-Wafer Nonuniformity (WIWNU) of material removal on wafer surface had been derived. Last, the WIWNU tests were conducted on CP-4 machine. The analysis results are in accord with experimental results. The results will provide some theoretical guide for designing the CMP equipment, selecting the movement variables in CMP and further understanding the material removal mechanism in wafer CMP.
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Authors: Feng Wei Huo, Dong Ming Guo, Ren Ke Kang, Zhu Ji Jin
Abstract: A 3D profiler based on scanning white light interferometry with a lateral sampling interval of 0.11μm was introduced to measure the surface topography of a #3000 diamond grinding wheel, and a large sampling area could be achieved by its stitching capability without compromising its lateral or vertical resolution. The protrusion height distribution of diamond grains and the static effective grain density of the grinding wheel were derived, and the wheel chatter and the deformation of the wheel were analyzed as well. The study shows that the grain protrusion height obeys an approximate normal distribution, the static effective grain density is much lower than the theoretical density, and only a small number of diamond grains are effective in the grinding process with fine diamond grinding wheel. There exists waviness on the grinding wheel surface parallel with the wheel cutting direction. The cutting surface of the grinding wheel is not flat but umbilicate, which indicates that the elastic deformation at the wheel edges is much larger than in the center region.
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