Papers by Author: Elisabeth Blanquet

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Authors: C. Raffy, L. Magaud, Elisabeth Blanquet, Michel Pons, A. Pasturel
111
Authors: Alexander Pisch, Elisabeth Blanquet, Michel Pons, Claude Bernard, Jean Marc Dedulle, Roland Madar
61
Authors: Alexander Pisch, Ana Maria Ferraria, Christian Chatillon, Elisabeth Blanquet, Michel Pons, Claude Bernard, Mikhail Anikin, Roland Madar
91
Authors: Jérôme Mezière, Michel Pons, Jean Marc Dedulle, Elisabeth Blanquet, Pierre Ferret, Lea Di Cioccio, Thierry Billon
141
Authors: Jean Marc Dedulle, Mikhail Anikin, Michel Pons, Elisabeth Blanquet, Alexander Pisch, Roland Madar, Claude Bernard
71
Authors: Arnaud Claudel, Elisabeth Blanquet, Didier Chaussende, M. Audier, D. Pique, Michel Pons
Abstract: To achieve AlN bulk growth, HTCVD chlorinated process is investigated. High growth rate and high crystalline quality are targeted for AlN films grown on (0001) α-Al2O3 and (0001) 4H or 6H SiC substrates between 1100 °C and 1750 °C. The precursors used are ammonia NH3 and aluminium chlorides AlClx species formed in situ by action of Cl2 on high purity Al wire. Both influences of temperature and carrier gas on microstructure, crystalline state and growth rate are presented. Growth rates higher than 190 μm.h-1 have been reached. Thermodynamic calculations were carried out to understand the chemistry of AlN deposition. AlN layers were characterized by SEM and θ/2θ X-Ray Diffraction. Their epitaxial relationships with substrates were deduced from pole figures obtained by X-Ray diffraction on a texture goniometer.
1269
Authors: Arnaud Claudel, Elisabeth Blanquet, Didier Chaussende, D. Pique, Michel Pons
Abstract: In order to achieve AlN bulk growth, HTCVD chlorinated process is investigated. High growth rate and high crystalline quality are targeted for AlN films grown on (0001) 4H SiC at 1750°C. The precursors used are ammonia NH3 and aluminium chlorides AlClx species formed in situ by action of Cl2 on high purity Al wire. Influences of N/Al ratio in the gas phase on growth rate, crystalline state and microstructure are presented. Growth rates of up to 200 µm/h have been reached for polycrystalline layers. Thermodynamic calculations were carried out and correlated to the experimental results. As-grown AlN layers were characterized by SEM and X-ray Diffraction. Surface morphology is studied by SEM and FEG-SEM and crystallographic orientations were obtained by X-ray diffraction on θ/2θ.
987
Authors: V. Williams, Etienne Pernot, E. Ramberg, Elisabeth Blanquet, Jean Marie Bluet, Roland Madar
1507
Authors: Peter J. Wellmann, Thomas L. Straubinger, Patrick Desperrier, Ralf Müller, Ulrike Künecke, Sakwe Aloysius Sakwe, Holger Schmitt, Albrecht Winnacker, Elisabeth Blanquet, Jean Marc Dedulle, Michel Pons
Abstract: We review the development of a modified physical vapor transport (M-PVT) growth technique for the preparation of SiC single crystals which makes use of an additional gas pipe into the growth cell. While the gas phase composition is basically fixed in conventional physical vapor transport (PVT) growth by crucible design and temperature field, the gas inlet of the MPVT configuration allows the direct tuning of the gas phase composition for improved growth conditions. The phrase "additional" means that only small amounts of extra gases are supplied in order to fine-tune the gas phase composition. We discuss the experimental implementation of the extra gas pipe and present numerical simulations of temperature field and mass transport in the new growth configuration. The potential of the growth technique will be outlined by showing the improvements achieved for p-type doping of 4H-SiC with aluminum, i.e. [Al]=9⋅1019cm-3 and ρ<0.2Ωcm, and n-type doping of SiC with phosphorous, i.e. [P]=7.8⋅1017cm-3.
25
Authors: Jérôme Mezière, Pierre Ferret, Elisabeth Blanquet, Michel Pons, Lea Di Cioccio, Thierry Billon
731
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