Papers by Author: Gábor Battistig

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Authors: Andrea E. Pap, Csaba Dücső, Katalin Kamarás, Gábor Battistig, István Bársony
Abstract: The high reactivity of the free silicon surface and its consequence: the “omnipresent” native silicon dioxide hinders the interface engineering in many processing steps of IC technology on atomic level. Methods known to eliminate the native oxide need in most cases vacuum processing. They frequently deteriorate the atomic flatness of the silicon. Hydrogen passivation by a proper DHF (diluted HF) treatment removes the native silicon oxide without roughening the surface while simultaneously maintains a “quasi oxide free” surface in a neutral or vacuum ambient for short time. Under such circumstances the last thermal desorption peak of hydrogen is activated at around 480-500°C where the free silicon surface suddenly becomes extremely reactive. In this study we show that deuterium passivation is a promising technology. Due to the fact that deuterium adsorbs more strongly on Si surface than hydrogen even at room temperature, deuterium passivation does not need vacuum processing and it ensures a robust process flow.
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Authors: Gábor Battistig, J. García López, N.Q. Khanh, Y. Morilla, M.A. Respaldiza, E. Szilágyi
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Authors: Z. Zolnai, A. Ster, N.Q. Khánh, E. Kótai, M. Posselt, Gábor Battistig, T. Lohner, J. Gyulai
Abstract: 500 keV nitrogen implantations at different tilt angles (0o, 0.5o, 1.2o, 1.6o, 4o) with respect to the c-axis of 6H-SiC were carried out. Radiation damage distributions have been investigated by Backscattering Spectrometry combined with channeling technique (BS/C) using 3550 keV 4He+ ion beam. A comparative simultaneous evaluation of the damage depth distributions in the Si and C sublattices of 6H-SiC led to a correction factor of 0.8 in the electronic stopping power of 4He+ ions along <0001> channel. Full-cascade Crystal-TRIM simulations with the same set of damage accumulation model parameters could reconstruct the measured shapes and heights of damage distributions for all implantation tilt angles. Secondary defect generation effects in addition to the primary point defect accumulation were assumed in the analysis.
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Authors: E. Szilágyi, N.Q. Khánh, Zsolt E. Horváth, T. Lohner, Gábor Battistig, Z. Zolnai, E. Kótai, J. Gyulai
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Authors: A. Manuaba, I. Pintér, E. Szilágyi, Gábor Battistig, C. Ortega, A. Grosman, G. Amsel
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Authors: Y. Morilla, J. García López, Gábor Battistig, J.L. Cantin, Juan Carlos Cheang-Wong, Hans Jürgen von Bardeleben, M.A. Respaldiza
Abstract: 6H-SiC single crystalline substrates were implanted at room temperature with 2 MeV Al2+ ions to fluences from 2×1014 Al2+ cm-2 to 7×1014 Al2+ cm-2 and with different current densities (from 6.6 to 33×1010 Al2+ cm-2 s-1). The depth profile of the damage induced by the Al2+ ions was determined by Backscattering Spectrometry in channeling geometry (BS/C) with a 3.5 MeV He2+ beam. The BS/C spectra were evaluated using the RBX code. The samples were subsequently annealed at 1100°C in N2 for one hour, in order to analyze their structural recovery by BS/C and the amount of the remaining defects by means of Electron Paramagnetic Resonance (EPR). The results from the BS/C spectra corresponding to the as-implanted samples indicate that the damage depends strongly on the total fluence but also, although to a lesser extent, on the beam current density. The BS/C measurements reveal that all the samples, except the one implanted with the highest fluence, recover completely their original crystalline structure after the annealing. Furthermore the angular anisotropy of the EPR spectra indicates that the implanted region recovered a good crystallinity, although some residual defects were observed.
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Authors: Giovanni Attolini, Matteo Bosi, Francesca Rossi, Bernard Enrico Watts, Giancarlo Salviati, Gábor Battistig, László Dobos, Béla Pécz
Abstract: 3C-SiC films were grown on Si by VPE using CBr4 as the carbon source, at temperatures ranging between 1100 to 1250°C. XRD, TEM, AFM, and SEM results indicate that the epitaxy proceeds as a 3D growth of uncoalesced islands at low temperature, whereas a continuous layer with hillocks on top is obtained above 1200°C. The shape and faceting of the islands are analyzed by AFM, showing (311) preferred facets.
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Authors: Andrea E. Pap, Zsolt Nényei, Gábor Battistig, István Bársony
Abstract: The well known wet chemical treatments of the silicon surface and its native oxidation in air cause a high density of interface states, which predominantly originate from dangling bonds strained bonds or from bonds, between adsorbates and silicon surface atoms. Therefore, a number of wet-chemical treatments have been developed for ultraclean processing in order to produce chemically and electronically passivated surfaces [1]. The saturation of dangling bonds by hydrogen removes the surface states and replaces them by adsorbate-induced states, which influence the surface band-bending [2]. The first thermal hydrogen desorption peak from a hydrogen passivated Si surface in vacuum or inert gas ambient can be detected at around 380°C [3,4]. Simultaneously the combination of the hydrogen atoms of neighboring dihydrides generates a pair of dangling bonds. At around 480-500°C dangling bonds are generated on the silicon surface by desorption of the remaining hydrogen [5]. At that moment the silicon surface becomes extremely reactive.
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Authors: L. Liszkay, K. Havancsák, Marie France Barthe, P. Desgardin, L. Henry, Z. Kajcsos, Gábor Battistig, E. Szilágyi, V.A. Skuratov
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Authors: Giovanni Attolini, Matteo Bosi, Bernard Enrico Watts, Gábor Battistig, László Dobos, Béla Pécz
Abstract: In this work we report on the growth of cubic silicon carbide using CBr4 and silane as precursors at different C3H8/CBr4 flow ratios. The layers were deposited on 2’’ (001) Si wafers by means of the VPE technique in a horizontal cold-wall reactor with induction heating. The growths were performed at atmospheric pressure, in H2 atmosphere and involved several steps: Si thermal etching; carburisation; epitaxial growth. Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) were performed to observe the film morphology and defects and correlate them with the gas phase composition. Results show that the addition of CBr4 to the standard SiH4 and C3H8 precursor can change the crystalline nature and the morphology of the grown SiC.
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