Papers by Author: Gabriel Ferro

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Authors: Tony Abi-Tannous, Maher Soueidan, Gabriel Ferro, Mihai Lazar, Berangère Toury, Marie France Beaufort, Jean François Barbot, J. Penuelas, Dominique Planson

Abstract: In order to form Ti3SiC2 on 4H-SiC(0001) 8°-off, 200 nm of Ti30Al70 was deposited onto SiC...

Authors: Jean Lorenzzi, Nikoletta Jegenyes, Mihai Lazar, Dominique Tournier, Davy Carole, François Cauwet, Gabriel Ferro

Abstract: In this work we report on the study of twin boundary (TB) evolution during heteroepitaxial growth of 3C-SiC on patterned 4H-SiC(0001)...

Authors: Gabriel Ferro

Abstract: In this paper, the issues related to in-situ doping of silicon carbide (SiC) semiconductor during epitaxial growth are reviewed. Some of...

Authors: Patrik Ščajev, Pavels Onufrijevs, Georgios Manolis, Mindaugas Karaliūnas, Saulius Nargelas, Nikoletta Jegenyes, Jean Lorenzzi, Gabriel Ferro, Milena Beshkova, Remigijus Vasiliauskas, Mikael Syväjärvi, Rositza Yakimova, Masashi Kato, Kęstutis Jarašiūnas

Abstract: We applied a number of time-resolved optical techniques for investigation of optical and photoelectrical properties of cubic SiC grown by...

Authors: Ghassan Younes, Maher Soueidan, Gabriel Ferro, Khaled Zahraman, Bilal Nsouli

Abstract: In this work the capability of the proton induced X-ray emission (PIXE) technique to monitor a rapid, non-destructive and accurate...

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