Papers by Author: Hajime Okumura

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Authors: Dai Okamoto, Yasunori Tanaka, Tomonori Mizushima, Mitsuru Yoshikawa, Hiroyuki Fujisawa, Kensuke Takenaka, Shinsuke Harada, Shuji Ogata, Toshihiko Hayashi, Toru Izumi, Tetsuro Hemmi, Atsushi Tanaka, Koji Nakayama, Katsunori Asano, Kazushi Matsumoto, Naoyuki Ohse, Mina Ryo, Chiharu Ota, Kazuto Takao, Makoto Mizukami, Tomohisa Kato, Manabu Takei, Yoshiyuki Yonezawa, Kenji Fukuda, Hajime Okumura

Abstract: We successfully fabricated 13-kV, 20-A, 8 mm × 8 mm, drift-free 4H-SiC PiN diodes. The fabricated diodes exhibited breakdown voltages that...

855
Authors: Kazutoshi Kojima, Hajime Okumura, Satoshi Kuroda, Kazuo Arai, Akihiko Ohi, Hiroyuki Akinaga

Abstract: Homoepitaxial growth was carried out on 4H-SiC on-axis substrate by horizontal hot wall chemical vapor deposition. By using carbon face...

93
Authors: Y. Kobayashi, Shinsuke Harada, Hiroshi Ishimori, Shinji Takasu, Takahito Kojima, Keiko Ariyoshi, Mitsuru Sometani, Junji Senzaki, Manabu Takei, Yasunori Tanaka, Hajime Okumura

Abstract: A 3.3 kV trench MOSFET with double-trench structure was demonstrated. The deep buried p-base regions were fabricated using tilt angle ion...

974
Authors: Yuuki Ishida, Mitsuhiro Kushibe, Tetsuo Takahashi, Hajime Okumura, Sadafumi Yoshida
275
Authors: Hitoshi Habuka, Yusuke Katsumi, Yutaka Miura, Keiko Tanaka, Yasushi Fukai, Takaya Fukae, Yuan Gao, Tomohisa Kato, Hajime Okumura, Kazuo Arai

Abstract: The etching technology for 4H-silicon carbide (SiC) was studied using ClF3 gas at 673-973K, 100 % and atmospheric pressure in a horizontal...

655
Authors: Kazutoshi Kojima, Tetsuo Takahashi, Yuuki Ishida, Satoshi Kuroda, Hajime Okumura, Kazuo Arai
209
Authors: Takeshi Mitani, Naoyoshi Komatsu, Tetsuo Takahashi, Tomohisa Kato, Toru Ujihara, Yuji Matsumoto, Kazuhisa Kurashige, Hajime Okumura

Abstract: We have investigated the solution growth under various Al-N co-doping conditions. Both p-type and n-type 4H-SiC were successfully grown...

9
Authors: Kazutoshi Kojima, Sachiko Ito, Junji Senzaki, Hajime Okumura

Abstract: We have carried out detailed investigations of 4H-SiC homoepitaxial growth on vicinal off-angled Si-face substrates. We found that the...

99
Authors: Mitsuo Okamoto, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, Kazuo Arai

Abstract: From a viewpoint of device application using p-channel SiC MOSFETs, control of their channel properties is of great importance. We aimed to...

711
Authors: Keiichi Yamada, Junji Senzaki, Kazutoshi Kojima, Hajime Okumura

Abstract: The new indicators, effective gate oxide thickness tc and effective gate electrode area D, and their...

433
Showing 1 to 10 of 118 Paper Titles