Papers by Author: Hirofumi Matsuhata

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Authors: Takashi Tsuji, T. Tawara, Ryohei Tanuma, Yoshiyuki Yonezawa, Noriyuki Iwamuro, K. Kosaka, H. Yurimoto, S. Kobayashi, Hirofumi Matsuhata, Kenji Fukuda, Hajime Okumura, Kazuo Arai

Abstract: The authors fabricated pn diodes with Al+ implantation in p-type epitaxial layers, and investigated the influence of the implantation dose...

913
Authors: Ryohei Tanuma, Tae Tamori, Yoshiyuki Yonezawa, Hirotaka Yamaguchi, Hirofumi Matsuhata, Kenji Fukuda, Kazuo Arai

Abstract: This paper describes the study of non-hollow-core elementary screw dislocations (SDs) in silicon carbide (SiC) diodes using X-ray microbeam...

251
Authors: Tamotsu Yamashita, Kenji Momose, Daisuke Muto, Yoshiki Shimodaira, Kuniaki Yamatake, Yoshihiko Miyasaka, Takayuki Sato, Hirofumi Matsuhata, Makoto Kitabatake

Abstract: We report our investigation results on triangular-defects formed on 4deg. off 4H-SiC epi- taxial wafers. Triangular-defects that had neither...

363
Authors: Hirofumi Matsuhata, Hirotaka Yamaguchi, Ichiro Nagai, Toshiyuki Ohno, Ryouji Kosugi, Akimasa Kinoshita

Abstract: Dislocations in a substrate wafer of 4H-SiC with an epi-layer were observed using technique of monochromatic synchrotron X-ray topography...

321
Authors: Tetsuo Hatakeyama, Kyoichi Ichinoseki, Hiroshi Yamaguchi, N. Sugiyama, Hirofumi Matsuhata

Abstract: The origins of certain types of micrometer-scale surface morphological defects on SiC epitaxial layers are clarified using X-ray topography....

359
Authors: Hirotaka Yamaguchi, Hirofumi Matsuhata, Ichiro Nagai

Abstract: We have investigated dislocation image of 4H-SiC wafers projected on synchrotron X-ray topographs taken under different positions in the...

313
Authors: Takasumi Ohyanagi, Chen Bin, Takashi Sekiguchi, Hirotaka Yamaguchi, Hirofumi Matsuhata

Abstract: The breakdown failure points in the 4H-SiC PiN diodes were analyzed by the electron beam induced current (EBIC). We focused on the failure,...

707
Authors: Naoyuki Kawabata, Atsushi Tanaka, Masatoshi Tsujimura, Yoshinori Ueji, Kazuhiko Omote, Hirotaka Yamaguchi, Hirofumi Matsuhata, Kenji Fukuda

Abstract: We investigated the effect of the basal plane dislocation (BPD) density in 4H-silicon carbide (SiC) substrates on the forward voltage...

384
Authors: Takuma Suzuki, Hirotaka Yamaguchi, Tetsuo Hatakeyama, Hirofumi Matsuhata, Junji Senzaki, Kenji Fukuda, Takashi Shinohe, Hajime Okumura

Abstract: The causes of extrinsic failures in time-dependent dielectric breakdown characteristics of gate oxide on C-face of 4H-SiC are examined by...

789
Authors: Noboru Ohtani, Masakazu Katsuno, T. Fujimoto, S. Sato, Hiroshi Tsuge, Wataru Ohashi, Hirofumi Matsuhata, Makoto Kitabatake

Abstract: Defect formation during the early stages of physical vapor transport (PVT) growth of 4H-SiC was investigated using high resolution x-ray...

489
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