Papers by Author: Hitoshi Ohsato

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Authors: Kensuke Wada, Kenichi Kakimoto, Hitoshi Ohsato
Authors: Kiyotaka Tanaka, Kenichi Kakimoto, Hitoshi Ohsato
Abstract: The development of lead-free piezoelectric materials has been required from the viewpoint of environmental preservation. We focused the lead-free KNbO3-based systems, and used a chemical solution deposition (CSD) process to obtain their precursor. (Na1-xKx)NbO3 precursor solutions were prepared from metal alkoxides and solvents such as absolute ethanol and 2-methoxyethanol. Crystallization behavior of the precursor gels obtained from the above solutions was investigated by the thermogravimetry differential thermal analysis (TG-DTA) measurement.
Authors: Hitoshi Ohsato, Keiji Wada, Tomohisa Kato, C.J. Sun, M. Razeghi
Authors: Hitoshi Ohsato
Abstract: This article summarizes the work of the author’s lab based on crystallography. The topics are categorized in the following three fields: The first category is crystallographic analysis of materials, the second one is correlations between crystal structure and their properties, and the third one is crystallography for processing such as epitaxy, topotaxy and templates. The examples for these categories are: (1) multilayer ceramic capacitor (MLCC); (2) microwave dielectrics of tungstenbronze-type like solid solutions, and piezoelectric materials langasite (La3Ga5SiO14); (3) thin film growth of GaN or AlN on sapphire for example of epitaxy, hydroxy-apatite grown on diopside for topotaxy, and template growth of microwave dielectrics for template. Crystallography is useful in all studies, but is not almighty. Interdisciplinary study between crystallography and solid state physics is necessary to make clear the mechanism of the properties.
Authors: Tsutomu Tsunooka, Tomonori Sugiyama, Hitoshi Ohsato, Kenichi Kakimoto, Minato Andou, Yutaka Higashida, Hirotsugu Sugiura
Authors: Z.N. Ismarrubie, Minato Ando, Tsutomu Tsunooka, Isao Kagomiya, Hitoshi Ohsato
Authors: Won Woo Cho, G. Zouganelis, Hitoshi Ohsato
Abstract: A metallodielectric metamaterial have been investigated by using FDTD (Finite Difference Time Domain) method and fabricated with a resin based rapid prototyping machine. It was composed of 7 layers of parallel periodic copper wires embedded in resin. The metallodielectric metamaterial shows a different near field distribution with direction of incident electric field E that causes different electromagnetic (EM) properties. In particular, when incident electric field E is vertical to the wires inside resin, we observe enhacement of electric field in the vicinity of the embedded metal wires according to the incident direction of electirc field E as compared with dielectirc wihout metal wires. The enhanced electric field by the embedded metal wire is responsible for the enhancement of effective dielectric constant.
Authors: Kiyotaka Tanaka, Kenichi Kakimoto, Hitoshi Ohsato
Abstract: Various KNbO3 powders have been derived from sol-gel process by using different preparation and heating conditions. KNbO3 powder derived from ethanol solution and fabricated at 800oC was most suitable as the raw material of KNbO3 bulk ceramics, because of the small grain size of about 250 nm and its homogeneous size distribution.
Authors: Kenichi Kakimoto, Izumi Masuda, Hitoshi Ohsato
Authors: Masashi Yamashita, Yukari Ishikawa, Hitoshi Ohsato, Noriyoshi Shibata
Abstract: An AlBN thin film with a boron content (B/(Al+B)) of 0.1 or 0.3 was obtained by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) using EB-guns as group-III element sources and an RF radical source for nitrogen supply. We compared the characteristics of the film with those of AlN and BN films. By reflective high-energy electron diffraction (RHEED), we observed ring patterns in the AlBN film. The X-ray photoelectron spectroscopy (XPS) N1s peak of the AlBN film was observed at a binding energy between the peaks of AlN and BN. There was no evidence for phase separation in the film.
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