Papers by Author: Ivan G. Ivanov

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Authors: T. Paskova, E. Valcheva, Ivan G. Ivanov, Rositza Yakimova, Susan Savage, Nils Nordell, Chris I. Harris
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Authors: Adam Gali, Peter Deák, E. Rauls, P. Ordejón, F.H.C. Carlsson, Ivan G. Ivanov, Nguyen Tien Son, Erik Janzén, Wolfgang J. Choyke
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Authors: T. Egilsson, Anne Henry, Ivan G. Ivanov, J. Lennart Lindström, Erik Janzén
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Authors: Mike F. MacMillan, L. Hultman, Christer Hallin, Ivan G. Ivanov, Anne Henry, Erik Janzén, S.A. Galloway
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Authors: Ivan G. Ivanov, Ulf Lindefelt, Anne Henry, T. Egilsson, Olof Kordina, Erik Janzén
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Authors: Jawad ul Hassan, Chariya Virojanadara, Axel Meyer, Ivan G. Ivanov, Jan I. Flege, Somsakul Watcharinyanon, Jens Falta, Leif I. Johansson, Erik Janzén
Abstract: We report graphene thickness, uniformity and surface morphology dependence on the growth temperature and local variations in the off-cut of Si-face 4H-SiC on-axis substrates. The transformation of the buffer layer through hydrogen intercalation and the subsequent influence on the charge carrier mobility are also studied. A hot-wall CVD reactor was used for in-situ etching, graphene growth in vacuum and the hydrogen intercalation process. The number of graphene layers is found to be dependent on the growth temperature while the surface morphology also depends on the local off-cut in the substrate and results in a non-homogeneous surface. Additionally, the influence of dislocations on surface morphology and graphene thickness uniformity is also presented.
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Authors: Christer Hallin, Alexsandre Ellison, Ivan G. Ivanov, Anne Henry, Nguyen Tien Son, Erik Janzén
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Authors: Ivan G. Ivanov, Alexsandre Ellison, Erik Janzén
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Authors: Ivan G. Ivanov, Anne Henry, Fei Yan, Wolfgang J. Choyke, Erik Janzén
Abstract: The analysis of the donor-acceptor pair luminescence of P-Al and N-Al pairs obtained recently for the cubic 3C polytype of SiC is viewed in some detail. A detailed consideration is given to the fitting procedure applied to the P-Al and N-Al spectra. Fit with theoretical models of spectra of type I and type II are applied to both N-Al and P-Al experimental spectra, and it is demonstrated that only contribution from P on Si site is observable in the presented samples. The accuracy of the obtained phosphorus ionization energy of 48.1 meV is also discussed.
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Authors: Ivan G. Ivanov, Anne Henry, Erik Janzén
Abstract: The procedure of fitting the spectra associated with donor-acceptor pair luminescence arising from nitrogen-aluminum and phosphorus-aluminum pairs in 4H SiC is described in detail. We show that the fitting can be used not only for accurate evaluation of the ionization energies of the different donors and acceptors involved, but also for unambiguous determination of their lattice sites.
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