Papers by Author: J.L. Cantin

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Authors: W. Sullivan, John W. Steeds, Hans Jürgen von Bardeleben, J.L. Cantin
Abstract: Several 4H SiC samples have been electron-irradiated at near threshold energies at low fluence, either along the [0001] or [000-1] direction. PL and EPR techniques have been used to investigate the dependence of the beam direction on defect generation and, together with a sample irradiated at a higher fluence, to correlate differences brought about by irradiating with a change in electron fluence. Attempts are made to correlate the information derived from the two techniques.
477
Authors: E. Hugonnard-Bruyère, Fabrice Letertre, Lea Di Cioccio, Hans Jürgen von Bardeleben, J.L. Cantin, Thierry Ouisse, Thierry Billon, Gérard Guillot
715
Authors: Hans Jürgen von Bardeleben, J.L. Cantin, Marina G. Mynbaeva, Stephen E. Saddow
495
Authors: Hans Jürgen von Bardeleben, J.L. Cantin, Sergey A. Reshanov, V.P. Rastegaev
507
Authors: Hans Jürgen von Bardeleben, J.L. Cantin
513
Authors: J.L. Cantin, Hans Jürgen von Bardeleben
Abstract: Previous Electron Paramagnetic Resonance (EPR) studies identified the carbon dangling bond center as the main paramagnetic interface defect in 3C, 4H, 6H-SiC/SiO2. We demonstrate that this defect, called PbC center, can be passivated by forming gas annealing at 400°C. We have measured the PbC density at annealed 4H- and 3C-SiC/SiO2 interfaces and attributed its reduction to the transformation of the dangling bonds into EPR inactive C-H bonds. We have also studied the reverse phenomenon occurring during vacuum annealing at temperatures ranging from 600°C up to 1000°C and have determined a dissociation energy of ≈4.3 eV for the 3C and 4H polytypes.
1015
Authors: Margarita Stepikhova, W. Jantsch, G. Kocher, M. Schoisswohl, J.L. Cantin, Hans Jürgen von Bardeleben
1533
Authors: Hans Jürgen von Bardeleben, J.L. Cantin, L. Ke, Y. Shishkin, Robert P. Devaty, Wolfgang J. Choyke
Abstract: The defects at the 3C-SiC/SiO2 interface have been studied by X-band EPR spectroscopy in oxidized porous 3C-SiC. One interface defect is detected; its spin Hamiltonian parameters, spin S=1/2, C3V symmetry, g//=2.00238 and g⊥=2.00317, central hyperfine interaction (CHF) with one carbon atom and AB//[001]=48G and superhyperfine (SHF) interaction with three equivalent Si neighbour atoms and TB//[001]=12.4G, allow us to attribute the center to a sp3 coordinated carbon dangling bond center, PbC.
273
Authors: Hans Jürgen von Bardeleben, J.L. Cantin, P.G. Baranov, E.N. Mokhov
509
Authors: B. Pajot, C. J. Fall, J.L. Cantin, Hans Jürgen von Bardeleben, R. Jones, Patrick R. Briddon, F. Gendron
349
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