Papers by Author: Ji Hun Oh

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Authors: S.G. Kim, Seung Boo Jung, Ji Hun Oh, H.J. Kim, Yong Hyeon Shin
Abstract: Polycrystalline ZnO thin films were for the first time deposited on SiO2/Si (100) substrate using 2-step deposition; atomic layer deposition (ALD) and RF magnetron sputtering, for Film Bulk Acoustic Resonator (FBAR) applications. The film deposition performed in this study was composed of following two procedures; the 1st deposition was using ALD method and 2nd deposition was using RF magnetron sputtering. The ZnO buffer layer ALD films were deposited using alternating diethylzinc (DEZn)/H2O exposures and ultrahigh purity argon gas for purging. Exposure time of 1 sec and purge time of 23 sec yielded an ALD cycle time. Two-step deposited ZnO films revealed stronger c-axis preferred-orientation than one-step deposited. Therefore, this method could be applied to the FBAR applications, since FBAR devices require high quality of thin films.
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Authors: Tae Sik Yoon, Ji Hun Oh, Sang Hyun Park, Viena Kim, Changwoo Kwon, Ki Bum Kim
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Authors: Jun Suh Yu, B.S. Lee, Sung Churl Choi, Ji Hun Oh, Jae Chun Lee
Abstract: Electrically conductive porous Si/SiC fiber media were prepared by infiltration of liquid silicon into porous carbon fiber preforms. The series rule of mixture for the effective electrical conductivity was applied to the disc shaped samples to estimate their silicon content, effective electrical conductivity and porosity. The electrical conductivity was estimated by assuming the disc sample as a plate of equivalent geometry, i.e., same thickness, electrode distance and volume. As the volumetric content of silicon in a sample increases from 0.026% to 0.97%, the estimated electrical conductivity increases from 0.17 S/cm to 2.09 S/cm. The porosity of the samples measured by Archimedes principle was in the range of 75~83% and 1~4% less than the one estimated by the series rule of mixture for the effective electrical conductivity.
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