Papers by Author: K.W. Cho

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Authors: J.H. Choi, H.S. Yoo, K.W. Cho, N.K. Kim, S.H. Oh, E.S. Choi, S.J. Yeom, H.J. Sun, S.S. Lee, K.N. Lee, Suk Kyoung Hong, Tae Whan Hong, Il Ho Kim, Sung Lim Ryu, Soon Young Kweon
Abstract: A 16Mb 1-transistor /1-capacitor (1T1C) FeRAM device was fabricated with lead-free Bi3.25La0.75Ti3.0O12 (BLT) capacitors. The key integration processes contain a scalable MTP (Merged Top-electrode and Plate-line) cell structure and reliable BLT ferroelectric capacitors. Ferroelectric properties of BLT films were optimized on the newly developed MTP cell structure. BLT films were coated on Pt/IrOx/Ir bottom electrode using sol-gel solutions. The composition of the optimized BLT film was about Bi3.25La0.75Ti3.0O12. The switchable polarization obtained in a 100nm-thick BLT film was about 20 µC/cm2 at the 3 V applied voltage, and the optimized BLT film showed a few fatigue losses about 10% up to 1 × 1011 cycles. The imprint properties of the BLT film were also characterized at 25°C and 90°C operating temperature after 125°C data storage. The average cell signal sensing margin between data "1" and data "0" was measured to be about 900 mV, which is a sufficiently large margin for device operation.
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Authors: Y.-J. Son, Y.G. Choi, Joon Chul Kwon, K.W. Cho, Young Moon Kim, Soon Young Kweon, Tae Whan Hong, Young Geun Lee, Sung Lim Ryu, Man Soon Yoon, Soon Chul Ur
Abstract: In an approach to acclimate ourselves to the recent ecological consciousness trends, a lead free piezoelectric material, bismuth sodium barium titanate (Bi0.5Na0.5)0.94Ba0.06TiO3 (BNBT), was considered as an environment-friendly alternative to the PZT system. A perovskite BNBT was synthesized by the conventional bulk ceramic processing technique.La2O3 as a dopant was incorporated into the BNBT system up to 0.025 mol, and the doping effects on subsequent piezoelectric and dielectric properties were systematically investigated. In the case of La2O3 addition, the formation of grain boundary coherency was remarkably increased, and the sintered density was increased with increasing La2O3 contents. Piezoelectric and dielectric properties were shown to have the maximum value at 0.02 mol of La2O3 addition. La3+ ions were believed to act as a softener in the BNBT system and to enhance dielectric and piezoelectric properties in this study.
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Authors: Y.G. Choi, Y.-J. Son, Joon Chul Kwon, K.W. Cho, Soon Young Kweon, Tae Whan Hong, Young Geun Lee, Sung Lim Ryu, Il Ho Kim, Man Soon Yoon, Soon Chul Ur
Abstract: To enhance high power characteristics for piezoelectric transformer, an alloy design approach in PZT base ceramic system was considered. Various Zr/Ti ratio compositions in 0.03Pb(Sb0.5Nb0.5)O3- 0.03Pb(Mn1/3Nb2/3)O3-(0.94-x)PbTiO3-xPbZrO3 (0.445x0.475 mol)[PSN - PMN - PZT] system were synthesized by the conventional bulk ceramic processing technique. To improve high power characteristics at their morphotropic phase boundary (MPB) composition of PSN-PMN-PZT system, various spectra of Zr/Ti ratio were systematically experimented, and their effects on the subsequent piezoelectric properties and dielectric properties for high power piezoelectric transformer application were investigated using an impedance analyzer and a laser vibrometer. Microstructure and phase information were characterized using X-ray diffractometer (XRD) and a scanning electron microscope (SEM). When the Zr/Ti ratios were 0.475/0.465, the mechanical quality factor and electromechanical coupling factor were shown to reach the maximum, indicating that this alloy design can be a feasible composition for high power transformer.
690
Authors: K.W. Cho, N.K. Kim, S.H. Oh, E.S. Choi, H.J. Sun, S.J. Yeom, K.N. Lee, Seoung Soo Lee, Suk Kyoung Hong, S.K. Choi, Tae Whan Hong, Il Ho Kim, J.I. Lee, Soon Chul Ur, Young Geun Lee, Sung Lim Ryu, Soon Young Kweon
Abstract: Ferroelectric properties of Pb-free (Bi,La)4Ti3O12 (BLT) films were optimized on a newly developed MTP cell structure. BLT films were coated on Pt/IrOx/Ir bottom electrode using sol-gel solutions. The composition of the optimized BLT film was about Bi3.25La0.75Ti3.0O12, which was analyzed by ICP-MS method. The switchable polarization obtained in a 100nm-thick BLT film was about 20 uC/cm2 at the 3 V applied voltage, and the optimized BLT film showed little fatigue loss about 10% up to 1×1011 cycles. The imprint properties of the BLT film were also characterized at 25 °C and 90 °C operating temperature after 125 °C data storage. Regardless of operating temperature, switchable polarization of BLT had a sufficiently large margin for device operation up to 10 years.
285
Authors: Moon Kwan Choi, Soon Chul Ur, Joon Chul Kwon, K.W. Cho, Il Ho Kim, Young Geun Lee, Sung Lim Ryu
Abstract: In an effort to synthesize homogenized single phase d-CoSb3, this study considers the mechanical alloying (MA) of elemental Co and Sb powders using a nominal stoichiometric composition followed by hot pressing. Single phase, undoped CoSb3 skutterudites were successfully produced by vacuum hot pressing using MA powders without subsequent annealing. Phase transformations during mechanical alloying, powder annealing, and hot pressing were systematically investigated using XRD and SEM. Thermoelectric properties were measured and compared with the results of similar studies. Temperature dependences were also evaluated, and their correlations to phase transformation were examined.
642
Authors: J.B. Park, S.-W. You, K.W. Cho, J.I. Lee, Soon Chul Ur, Il Ho Kim
Abstract: Induction melting was attempted to prepare the undoped and Nb-doped CoSb3 compounds, and their thermoelectric properties were investigated. Single phase d-CoSb3 was successfully obtained by induction melting and subsequent annealing at 400°C for 2 hours in vacuum. The positive signs of Seebeck coefficients for all the specimens revealed that Nb atoms acted as p-type dopants by substituting Co atoms. Electrical conductivity decreased and then increased with increasing temperature, indicating mixed behaviors of metallic and semiconducting conductions. Electrical conductivity increased by Nb doping, and it was saturated at high temperature. Maximum value of the thermoelectric power factor was shifted to higher temperature with the increasing amount of Nb doping, mainly originated from the Seebeck coefficient variation.
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Authors: J.B. Park, S.-W. You, K.W. Cho, J.I. Lee, Soon Chul Ur, Il Ho Kim
Abstract: Induction melting was attempted to prepare the undoped and Nb-doped CoSb3 compounds, and their thermoelectric properties were investigated. Single phase d-CoSb3 was successfully obtained by induction melting and subsequent annealing at 400°C for 2 hours in vacuum. The positive signs of Seebeck coefficients for all the specimens revealed that Nb atoms acted as p-type dopants by substituting Co atoms. Electrical conductivity decreased and then increased withincreasing temperature, indicating mixed behaviors of metallic and semiconducting conductions. Electrical conductivity increased by Nb doping, and it was saturated at high temperature. Maximum value of the thermoelectric power factor was shifted to higher temperature with the increasing amount of Nb doping, mainly originated from the Seebeck coefficient variation.
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