Papers by Author: Katsuhiko Miya

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Authors: Kenichi Sano, Masayuki Wada, Frederik E. Leys, Roger Loo, Andriy Hikavyy, Paul W. Mertens, James Snow, Akira Izumi, Katsuhiko Miya, Atsuro Eitoku
Abstract: Strained silicon engineering was first used at the 90-nm node. Nowadays, a series of techniques has seen wide-spread use and many derivatives are available because of their ease of integration and cost-effective features [ , ]. As a main part of stressor technique, embedded SiGe-S/D technology is reported to improve the pMOSFET drive current [ , ].
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Authors: Katsuhiko Miya, Takuya Kishimoto, Akira Izumi
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Authors: N. Kurumoto, Atsuro Eitoku, Katsuhiko Miya
Abstract: As the critical dimension of LSI continues to decrease, the surface tension of water and its effect on the formation of watermarks is becoming a significant problem. It is known that watermarks are easily generated when a silicon hydrophobic surface is dried in a wet cleaning process. Many studies about watermarks have been reported [1, 2]. Additionally if the rinse and dry steps were performed under an inert (nitrogen) ambient and the rinse water had low oxygen concentration, watermarks could be effectively avoided [3, 4].
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