Papers by Author: Kenichi Suzuki

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Authors: Kenichi Suzuki, Yuichiro Kuroki, Tomoichiro Okamoto, Masasuke Takata
Abstract: Alpha aluminum oxide (α-Al2O3) ceramics was coupled and reacted with zinc oxide (ZnO) ceramics at 1200°C for 24 h. Energy dispersive X-ray spectroscopy (EDS) analysis revealed the existence of step-shaped distribution of Al and Zn near the interface between α-Al2O3 and ZnO. Intense ultraviolet (3.75 eV) emission was clearly observed from the layer. On the other hand, very weak emissions were observed outside the layer near the interface. The compound in the layer is considered to be an attractive material for ultraviolet optoelectronics.
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Authors: Kenichi Suzuki, Yuichiro Kuroki, Tomoichiro Okamoto, Masasuke Takata
Abstract: Beta gallium oxide (β-Ga2O3) ceramics was coupled and reacted with zinc oxide (ZnO) ceramics at 1200oC for 24 h. Energy dispersive X-ray spectroscopy (EDS) analysis revealed the existence of diffusion layer near the interface between β-Ga2O3 and ZnO. Furthermore, the layer showed monochromatic and intense cathodoluminescence (CL) at 3.5 eV. On the other hand, very weak emissions were observed from the out of the layer. The compound in the layer is considered to be an attractive material for ultraviolet optoelectronics.
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Authors: Kenichi Suzuki, Yuichiro Kuroki, Tomoichiro Okamoto, Masasuke Takata
Abstract: Zinc oxide (ZnO) ceramics was coupled and reacted with alpha aluminum oxide (α-Al2O3) ceramics at 1200oC for 24 h. SEM observation and energy dispersive X-ray spectroscopy (EDS) analysis revealed the existence of diffusion layer of 10 μm thickness on the α-Al2O3 side of interface between ZnO and α-Al2O3. The diffusion layer is considered to consist of a ZnAl2O4, from the result of XRD. The cathodoluminescence of the diffusion layer was compared with that of zinc aluminate (ZnAl2O4) ceramics synthesized by conventional solid state reaction method. The single phase ZnAl2O4 showed weak emission peaked at 4.6 eV. On the other hand, the diffusion layer showed intense emission peaked at 3.75 eV. The ZnAl2O4 on the α-Al2O3 side of the interface synthesized by coupling of ZnO and α-Al2O3 is considered to be a excellent material as an ultraviolet light emitter.
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Authors: Kenichi Suzuki, Yuichiro Kuroki, Tomoichiro Okamoto, Masasuke Takata
Abstract: Beta gallium oxide (β-Ga2O3) crystals were grown on β-Ga2O3 ceramics heated by electric current under vacuum at various ambient temperatures. From cathodoluminescence at room temperature, emission peaks at 2.9 and 3.5 eV were clearly observed. With increasing ambient temperature, the relative intensity of ultraviolet emission (3.5 eV) to blue emission (2.9 eV) showed a peak at 400oC. These results suggest that the ambient temperature during the electric current heating of β-Ga2O3 ceramics in vacuum is one of the most effective factors for the ultraviolet emissive β-Ga2O3 crystal.
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