Papers by Author: Kenji Fukuda

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Authors: Hiroshi Kono, Takuma Suzuki, Kazuto Takao, Masaru Furukawa, Makoto Mizukami, Chiharu Ota, Shinsuke Harada, Junji Senzaki, Kenji Fukuda, Takashi Shinohe

Abstract: 1.2 mm × 1.2 mm and 2.7 mm × 2.7 mm silicon carbide double-implanted metal-oxide-semiconductor field-effect transistors (DIMOSFETs) were...

607
Authors: Hiroshi Kono, Takuma Suzuki, Makoto Mizukami, Chiharu Ota, Shinsuke Harada, Junji Senzaki, Kenji Fukuda, Takashi Shinohe

Abstract: Silicon carbide Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors (DIMOSFETs) were fabricated on 4H-SiC (000-1) carbon...

987
Authors: Dai Okamoto, Yasunori Tanaka, Tomonori Mizushima, Mitsuru Yoshikawa, Hiroyuki Fujisawa, Kensuke Takenaka, Shinsuke Harada, Shuji Ogata, Toshihiko Hayashi, Toru Izumi, Tetsuro Hemmi, Atsushi Tanaka, Koji Nakayama, Katsunori Asano, Kazushi Matsumoto, Naoyuki Ohse, Mina Ryo, Chiharu Ota, Kazuto Takao, Makoto Mizukami, Tomohisa Kato, Manabu Takei, Yoshiyuki Yonezawa, Kenji Fukuda, Hajime Okumura

Abstract: We successfully fabricated 13-kV, 20-A, 8 mm × 8 mm, drift-free 4H-SiC PiN diodes. The fabricated diodes exhibited breakdown voltages that...

855
Authors: Takashi Tsuji, Hiromu Shiomi, Naoyuki Ohse, Yasuhiko Onishi, Kenji Fukuda

Abstract: In this paper, newly developed 3300V-class IEMOSFETs were presented. By means of the optimization of current spreading layers (CSLs), we...

962
Authors: Shinsuke Harada, Makoto Kato, Mitsuo Okamoto, Tsutomu Yatsuo, Kenji Fukuda, Kazuo Arai

Abstract: The channel mobility in the SiC MOSFET degrades on the rough surface of the p-well formed by ion implantation. Recently, we have developed...

1281
Authors: Seiji Suzuki, Shinsuke Harada, Tsutomu Yatsuo, Ryouji Kosugi, Junji Senzaki, Kenji Fukuda
753
Authors: Mitsuo Okamoto, Seiji Suzuki, Makoto Kato, Tsutomu Yatsuo, Kenji Fukuda

Abstract: We have fabricated lateral RESURF MOSFETs on 4H-SiC(0001) Si-face and (000-1) C-face substrates, and compared those properties. The channel...

805
Authors: Kenji Fukuda, Makoto Kato, Junji Senzaki, Kazutoshi Kojima, Takaya Suzuki
1417
Authors: Mitsuo Okamoto, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, Kazuo Arai

Abstract: From a viewpoint of device application using p-channel SiC MOSFETs, control of their channel properties is of great importance. We aimed to...

711
Authors: Kenji Fukuda, Junji Senzaki, Mitsuhiro Kushibe, Kazutoshi Kojima, Ryouji Kosugi, Seiji Suzuki, Shinsuke Harada, Takaya Suzuki, Tomoyuki Tanaka, Kazuo Arai
1057
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