Papers by Author: M. Petrović

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Authors: Declan Carolan, M. Petrović, Alojz Ivanković, Neal Murphy
Abstract: Polycrystalline Cubic Boron Nitride (PCBN) is a superhard material which is used in machining of hardened steels and other abrasive and aerospace grade alloys. In these applications the tools are subjected to high operating temperatures, abrasive and impact loading. Impact loading can lead to the sudden fracture and hence failure of the tool. In this work the static and dynamic fracture toughness of PCBN is determined via a combined experimental-numerical approach. The results show that the fracture toughness of PCBN varies with loading rate.
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Authors: Srboljub J. Stanković, M. Petrović, M. Kovačević, A. Vasić, P. Osmokrović, B. Lončar
Abstract: CdZnTe detectors have been employed in diagnostic X-ray spectroscopy. This paper presents the Monte Carlo calculation of X-ray deposited energy in a CdZnTe detector for different energies of photon beam. In incident photon direction, the distribution of absorbed dose as deposited energy in detector is determined. Based on the dependence of the detector response on the thickness and different Zn fractions, some conclusions about changes of the material characteristics could be drawn. Results of numerical simulation suggest that the CdZnTe detector could be suitable for X-ray low energy.
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Authors: Srboljub J. Stanković, R.D. Ilić, M. Petrović, B. Lončar, A. Vasić
Abstract: The use of semiconductor materials in radiation processing, radiation therapy and diagnostics, and detection of cosmic radiation motivated development of numerical methods for its radiological characterization. This paper presents the application of the Monte Carlo method using the FOTELP-2K4 code for radiological characterization of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) dosimeter. The advantages of MOSFET dosimeters include small size, immediate readout, and ease of use for a wide photon energy range. In order to determine the dosimeter response accurately, distribution of the absorbed dose in the MOSFET structure has been investigated. Our results show that the absorbed dose distribution calculated by the presented simulation model compares well with the published data.
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