Papers by Author: Martin Hundhausen

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Authors: Felix Fromm, Martin Hundhausen, Michl Kaiser, Thomas Seyller

Abstract: Raman spectroscopy is commonly applied for studying the properties of epitaxial graphene on silicon carbide (SiC). In principle, the Raman...

1166
Authors: S. Rohmfeld, Martin Hundhausen, Lothar Ley
657
Authors: Markus Ostler, Roland J. Koch, Florian Speck, Felix Fromm, Hendrik Vita, Martin Hundhausen, Karsten Horn, Thomas Seyller

Abstract: Epitaxial graphene (EG) grown on SiC(0001) resides on the so-called buffer layer. This carbon rich (6√3×6√3)R30° reconstruction is...

649
Authors: Roland Püsche, S. Rohmfeld, Martin Hundhausen, Lothar Ley
583
Authors: Roland Püsche, Martin Hundhausen, Lothar Ley, Kurt Semmelroth, Gerhard Pensl, Patrick Desperrier, Peter J. Wellmann, Eugene E. Haller, J.W. Ager, Ulrich Starke

Abstract: We study electronic Raman scattering of phosphorus and nitrogen doped silicon carbide (SiC) as a function of temperature in the range 7K <...

579
Authors: B. Herzog, S. Rohmfeld, Roland Püsche, Martin Hundhausen, Lothar Ley, Kurt Semmelroth, Gerhard Pensl
625
Authors: Jonas Röhrl, Martin Hundhausen, Konstantin V. Emtsev, Thomas Seyller, Lothar Ley

Abstract: We present a micro-Raman spectroscopy study on single- and few layer graphene (FLG) grown on the silicon terminated surface of 6H-silicon...

567
Authors: Kurt Semmelroth, Michael Krieger, Gerhard Pensl, Hiroyuki Nagasawa, Roland Püsche, Martin Hundhausen, Lothar Ley, M. Nerding, Horst P. Strunk
151
Authors: John W. Steeds, G.A. Evans, S.A. Furkert, Lothar Ley, Martin Hundhausen, Norbert Schulze, Gerhard Pensl
305
Authors: Peter J. Wellmann, Z.G. Herro, M. Selder, F. Durst, Roland Püsche, Martin Hundhausen, Lothar Ley, Albrecht Winnacker
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