Papers by Author: Matthew H. Ervin

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Authors: Lin Zhu, Mayura Shanbhag, T. Paul Chow, Kenneth A. Jones, Matthew H. Ervin, Pankaj B. Shah, Michael A. Derenge, R.D. Vispute, T. Venkatesan, Anant K. Agarwal
843
Authors: Kenneth A. Jones, T.S. Zheleva, Matthew H. Ervin, Pankaj B. Shah, Michael A. Derenge, G.J. Gerardi, Jaime A. Freitas, R.D. Vispute
929
Authors: Matthew H. Ervin, Kenneth A. Jones, Un Chul Lee, Taniya Das, M.C. Wood
Abstract: While nickel ohmic contacts to n-type silicon carbide have good electrical properties, the physical contact, and therefore the reliability, can be poor. An approach is described for using the good electrical properties of Ni ohmic contacts while using another metal for its desired mechanical, thermal and/or chemical properties. In the present work, once the Ni contacts have been annealed forming nickel silicides and achieving low contact resistance, they are etched off. Removing the primary Ni contacts also eliminates the poor morphology, voids, and at least some of the excess carbon produced by the Ni/SiC reaction. The Ni contacts are then replaced by a second contact metal. This second metal displays low contact resistance as-deposited, indicating that the critical feature responsible for the ohmic contact has not been removed by the primary contact etch. Not only does this approach provide more flexibility for optimizing the contact for a given application, it also provides some insight into the ohmic contact formation mechanism.
859
Authors: Lin Zhu, Peter A. Losee, T. Paul Chow, Kenneth A. Jones, Charles Scozzie, Matthew H. Ervin, Pankaj B. Shah, Michael A. Derenge, R.D. Vispute, T. Venkatesan, Anant K. Agarwal
Abstract: 4H-SiC PiN rectifiers with implanted anode and single-zone JTE were fabricated using AlN capped anneal. The surface damage during the high temperature activation anneal is significantly reduced by using AlN capped anneal. The forward drop of the PiN rectifiers at 100A/cm2 is 3.0V while the leakage current is less than 10-7A/cm2 up to 90% breakdown voltage at room temperature. With 6μm thick and 2×1016cm-3 doped drift layer, the PiN rectifiers can achieve near ideal breakdown voltage up to 1050V. Hole impact ionization rate was extracted and compared with previously reported results.
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Authors: Kenneth A. Jones, Pankaj B. Shah, Michael A. Derenge, Matthew H. Ervin, G.J. Gerardi, Jaime A. Freitas, G.C.B. Braga, R.D. Vispute, R.P. Sharma, O.W. Holland
819
Authors: Stephen E. Saddow, G.E. Carter, Bruce Geil, T.S. Zheleva, Galyna Melnychuck, M.E. Okhuysen, Michael S. Mazzola, R.D. Vispute, Michael A. Derenge, Matthew H. Ervin, Kenneth A. Jones
245
Authors: Kenneth A. Jones, T.S. Zheleva, V.N. Kulkarni, Matthew H. Ervin, Michael A. Derenge, R.D. Vispute
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