Papers by Author: Min Jin

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Authors: Yong Zheng Fang, Min Jin, Qing Bo He, Hui Shen, Guo Jian Jiang, Jia Yue Xu
Abstract: The crack behavior of Si-doped GaAs crystals produced by a novel pulling-down method was investigated. Some cracks were observed in the crystal tail part and no twins or polycrystals were observed. The cracking mechanism was discussed considering the growth parameters, such as the pulling-down rate, annealing time and cooling speed of the furnace. The crystal was easily broken if the cooling rate was too fast. To avoid cracking, the temperature profile and the growth parameters had been optimized. The cleavage property of the GaAs crystal was strongly related to its atomic arrangement and corresponding electron density map. Ultrasonic vibration or mechanical machine would make the crystal cleaved along (110) plane. GaAs crystal displayed a strong anisotropic crack property under the force of microindentation test.
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Authors: Min Jin, Jia Yue Xu, Qing Bo He, Yong Zheng Fang, Hui Shen, Guo Jian Jiang, Zhan Yong Wang
Abstract: Compound semiconductor GaAs crystal was grown by the pulling-down method and the Φ2" GaAs boules were obtained. The growth defects, such as growth stripes, small facets, pits and dislocations, were observed. The pits on the surface of the boule was attributed to the water content of B2O3 encapsulant and the growth defects on the tail were associated with the evaporation of As due to GaAs decomposition. The average EPD (etch pit density) was measured less than 5000 cm-2, which shows the pulling-down method was a potential technique to grow high quality GaAs crystals.
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Authors: Hui Shen, Jia Yue Xu, An Hua Wu, Min Jin, Guo Jian Jiang
Abstract: YFeO3 single crystal, as a novel magneto-optical material, has attracted much attention due to its remarkable properties of primary significance for technological applications. In this work, YFeO3 crystal was successfully grown by optical floating zone method. Some voids are observed in the polished surface. The voids are effectively decreased by denser feed rod. In the etching samples, hexagonal etch patterns, sub-grain boundary and concentric growth striations were observed by optical microscope and SEM. The formation mechanism of these defects was discussed, and effective measures to restrain these defects were also proposed.
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Authors: Xin Hua Li, Jia Yue Xu, Min Jin, Hui Shen, Bao Liang Lu, Zhan Yong Wang
Abstract: LiNbO3 (Mg:LN) crystal is an important electro-optical material and MgO-doped LiNbO3 was expected to improve its optical damage resistance. In the present work, we reported the Bridgman growth of MgO-doped LiNbO3 crystal. The growth parameters were discussed and the defects were investigated by the chemical etching method. The etch hillocks and etch pits were observed on the negative Z surface while only etch pits on the positive Z surface by the optical microscope and EPMA. The etching morphology was discussed considering the domain structure.
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Authors: Jia Yue Xu, Hui Shen, Shi Ji Fan, Min Jin, Bao Liang Lu, Min Li Shi
Abstract: The solid solution crystal Pb(Zn1/3Nb2/3)O3-PbTiO3 [PZNT] has been grown from the high temperature solution. The crystallization behavior of PZNT was investigated. The evaporation of PbO was controlled by sealing crucible and the erosion of the melt or solution on Pt crucible was discussed. By optimizing growth conditions, high quality PZNT crystal was obtained. The ferroelectric properties were measured and the results showed as–grown crystal has high performance.
1146
Authors: Min Jin, Hui Shen, Jia Yue Xu
Abstract: In the present work, a pulling down method was introduced to prepare the KNbO3 crystals and the growth results were evaluated. It was found the Pt crucible with 60° cone angle and folds at the seed well was helpful to obtain KNbO3 crystal with nice integrity. The blue color occurred on the top of KNbO3 ingot was confirmed to be orthorhombic KNbO3 by XRD analysis. Some complex domain structures, including 60°, 90° and 180° domains, were happened in the crystal which were attributed to phase transitions when it was cooled down to room temperature.
2307
Authors: Min Jin, Jia Yue Xu, Qing Bo He, Yong Zheng Fang, Hui Shen, Zhan Yong Wang, Guo Jian Jiang
Abstract: Undoped GaAs single crystal has been grown in PBN crucibles by the pulling-down method. The temperature profile of the furnace was optimized with a narrow melting zone and a small temperature gradient at the solid-liquid interface. Quartz ampoules were used to protect the evaporation of As during the growth and the deformation of the ampoule was discussed as a function of temperature, time and pressure differential. A Ø56 mm×70 mm GaAs crystal with nearly 100 % single crystalline yield was obtained. X-ray rocking curve analysis revealed the excellent crystalline quality. The average EPD and electrical properties of the crystal were tested comparable to those of the crystal produced by the VGF method. Therefore, the pulling down method was a feasible approach for GaAs crystal production.
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