Papers by Author: Ming Hang Weng

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Authors: Chien Cheng Liu, Ming Hang Weng, Chien Tang Wang, Jheng Hong Chen, Yung Chih Chou, Huai Wei Yaw
Abstract: TiN/NbN multilayers on steel substrates (SKD11) are produced using DC magnetron sputtering process. The multilayer obtained are characterized in composition by means of X-ray diffraction techniques, Microhardness and adhesion to the substrate were studied by atomic force microscopy and scratch tests. The morphological analysis and coating structure are studied using scanning electron microscopy, and atomic force microscopy. The film thickness is measured by a stylus profiler (XP-2 stylus profiler). Wear tests were performed on pin-on-disk configuration and dry sliding conditions, at 5N load by using hardened steel ball. On mechanical properties, higher Young’s modulus and hardness values follow to increase the TiN/NbN layers number. The multilayer films of 64 layers at 500°C 1h annealing indicated that the microhardness and Young’s modulus had the highest values.
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Authors: Hsiao Yeh Chu, Ming Hang Weng, Ru Yuan Yang, Chien Wei Huang, Chien Cheng Liu
Abstract: In this paper, we successfully fabricate polycrystalline silicon films with very large and uniform-size grains by the method of nanometer thick aluminum induced crystallization (nano-AIC) on the a-Si:H film deposited by plasma enhanced chemical vapor deposition (PECVD). The effect of annealing ramp-up time is discussed. Four different annealing ramp-up time, 1,5,10,20 hours, are tested. The results show the maximum average grain size obtained in this paper is about 60 μm under the condition of 20-hour annealing ramp-up time. The nano-AIC specimens show a much better leakage current characteristics than the AIC specimens since the Al layer in AIC process is much thicker and was not removed completely from the polycrystalline silicon film during Al wet selective etching process.
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Authors: Chuen Shii Chou, Ru Yuan Yang, Ming Hang Weng, Chun Hung Yeh
Abstract: This study investigated the effect of the sintering temperature on the performance of a dye-sensitized solar cell (DSSC). A nanocrystalline TiO2 layer was fabricated on the ITO substrate using the doctor blade technique, and the working electrode was then sintered in a high-temperature furnace. The working electrode with a TiO2 thin film was immersed in the solution of the CuPc dye (copper phthalocyanine 32 16 8 C H CuN ) powder for 12 hours. Finally, the DSSC was assembled, and the short-circuit photocurrent and the open-circuit photovoltage of DSSC were measured using a home-made I-V measurement system. The short-circuit photocurrent significantly increases from 8.02 to 16.85 μA as the sintering temperature increases from 165 to 550 C  . Furthermore, the open-circuit photovoltage substantially increases from 0.084 to 0.42V as the sintering temperature increases from 165 to 550 C  .
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