Papers by Author: Moritz Beleites

Paper TitlePage

Authors: Robert Göckeritz, Denny Schmidt, Moritz Beleites, Gerhard Seifert, Stefan P. Krischok, Marcel Himmerlich, Jörg Pezoldt
Abstract: Epitaxial graphene was grown on Si-face 4H-SiC. A SiC pretreatment with a carbon cap¬ping technique was used as well as slow heating rates and a temperature of 1800 °C under atmos¬pheric argon pressure. The surface morphology was investigated by atomic force microscopy and Raman spectroscopy was performed for samples with different graphitization times.
785
Showing 1 to 1 of 1 Paper Titles