Papers by Author: Noriyuki Iwamuro

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Authors: Takashi Tsuji, T. Tawara, Ryohei Tanuma, Yoshiyuki Yonezawa, Noriyuki Iwamuro, K. Kosaka, H. Yurimoto, S. Kobayashi, Hirofumi Matsuhata, Kenji Fukuda, Hajime Okumura, Kazuo Arai

Abstract: The authors fabricated pn diodes with Al+ implantation in p-type epitaxial layers, and investigated the influence of the implantation dose...

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Authors: Takashi Tsuji, Akimasa Kinoshita, Noriyuki Iwamuro, Kenji Fukuda, Kazuo Tezuka, Tatsuro Tsuyuki, Hiroshi Kimura

Abstract: The 1200V class silicon carbide Schottky barrier diodes were designed and fabricated. The drift layer resistance was reduced in order to...

917
Authors: Shinsuke Harada, Yasuyuki Hoshi, Yuichi Harada, Takashi Tsuji, Akimasa Kinoshita, Mitsuo Okamoto, Youichi Makifuchi, Yasuyuki Kawada, Kouji Imamura, Masahide Gotoh, Takeshi Tawara, Shinichi Nakamata, T. Sakai, Fumikazu Imai, Naoyuki Ohse, Mina Ryo, Atsushi Tanaka, Kazuo Tezuka, Tatsurou Tsuyuki, Saburou Shimizu, Noriyuki Iwamuro, Yoshiyuki Sakai, Hiroshi Kimura, Kenji Fukuda, Hajime Okumura

Abstract: SiC power module with low loss and high reliability was developed by utilizing IEMOSFET and SBD. The IEMOSFET is the SiC MOSFET with high...

1053
Authors: Kazuo Tezuka, Tatsurou Tsuyuki, Saburou Shimizu, Shinichi Nakamata, Takashi Tsuji, Noriyuki Iwamuro, Shinsuke Harada, Kenji Fukuda, Hiroshi Kimura

Abstract: In this paper, we demonstrate the fabrication of SBD utilizing SiC process line specially designed for mass production of SiC power device....

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