Papers by Author: Peder Bergman

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Authors: Pierre Brosselard, Nicolas Camara, Jawad ul Hassan, Xavier Jordá, Peder Bergman, Josep Montserrat, José Millan

Abstract: An innovative process has been developed by Linköping University to prepare the 4HSiC substrate surface before epitaxial growth. The...

991
Authors: Jawad ul Hassan, Peder Bergman, Anne Henry, Henrik Pedersen, Patrick J. McNally, Erik Janzén

Abstract: We report on the growth of 4H-SiC epitaxial layer on Si-face polished nominally on-axis 2” full wafer, using Hot-Wall CVD epitaxy. The...

53
Authors: Anne Henry, Bo Monemar, Peder Bergman, J. Lennart Lindström, Y. Zhang, James W. Corbett
117
Authors: M. Godlewski, M. Surma, A.J. Zakrzewski, T. Wojtowicz, G. Karczewski, Jacek Kossut, Peder Bergman, Bo Monemar
1677
Authors: Peder Bergman, H. Jakobsson, L. Storasta, F.H.C. Carlsson, Björn Magnusson, S.G. Sridhara, G.R. Pozina, H. Lendenmann, Erik Janzén
9
Authors: I.D. Booker, Jawad ul Hassan, Anders Hallén, Einar Ö. Sveinbjörnsson, Olof Kordina, Peder Bergman

Abstract: We compare two methods for post-growth improvement of bulk carrier lifetime in 4H-SiC: dry oxidations and implantations with either 12C or...

285
Authors: L. Storasta, Björn Magnusson, Anne Henry, Margareta K. Linnarsson, Peder Bergman, Erik Janzén
423
Authors: Peder Bergman, H. Lendenmann, Per Åke Nilsson, Ulf Lindefelt, P. Skytt
299
Authors: F.H.C. Carlsson, S.G. Sridhara, Anders Hallén, Peder Bergman, Erik Janzén
345
Authors: M. Godlewski, Peder Bergman, Bo Monemar, B. Koziarska, A. Suchocki, G. Karczewski, T. Wojtowicz, Jacek Kossut, A. Waag, D. Hommel
455
Showing 1 to 10 of 75 Paper Titles