Papers by Author: Phillippe Godignon

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Authors: Amador Pérez-Tomás, Marcel Placidi, N. Baron, Sébastien Chenot, Yvon Cordier, J.C. Moreno, José Millan, Phillippe Godignon
Abstract: Channel mobility properties of SiC and GaN based MOSFETs and AlGaN/GaN HEMTs are compared in this paper. For a similar active area, the specific on-resistance of the MOSFET is much larger than the on-resistance for the HEMT, which is depending on the electron mobility in their respective channels. Physically-based models are used to fit this experimental transistor mobility.
1207
Authors: E. Maset, Esteban Sanchis-Kilders, Pierre Brosselard, Xavier Jordá, Miquel Vellvehi, Phillippe Godignon
Abstract: Silicon Carbide 300V-5A Ni and W Schottky diodes with high temperature operation capability (up to 300°C) have been fabricated. This paper reports on the stability tests (ESA space mission to Mercury, BepiColombo requirements) performed on these diodes. A DC current stress of 5A has been applied to these diodes at 270°C for 800 hours. These reliability tests revealed both, degradation at the Schottky interface (forward voltage drift) and at the diode top surface due to Aluminum diffusion (bond pull strength degradation). The use of W as Schottky metal allows eliminating the forward voltage drift producing stable metal–semiconductor interface properties. Nevertheless, SEM observations of the top metallization still reveal metal degradation after stress. The bond pull strength of the wire bond is also significantly reduced.
925
Authors: Dominique Tournier, Peter Waind, Phillippe Godignon, L. Coulbeck, José Millan, Roger Bassett
Abstract: Due to the significant achievements in SiC bulk material growth and in SiC device processing technology, this semiconductor has received a great interest for power devices, particularly for SiC high-voltage Schottky barrier rectifiers. The main difference to ultra fast Si pin diodes lies in the absence of reverse recovery charge in SiC SBDs. This paper reports on 4.5kV-8A SiC Schottky diodes / Si-IGBT modules. The Schottky termination design and the fabrication process gives a manufacturing yield of 40% for large area devices on standard starting material. Modules have been successfully assembled, containing Si-IGBTs and 4.5kV-SiC Schottky diodes and characterized in both static and dynamic regimes. The forward dc characteristics of the modules show an on-resistance of 33mohm.cm2 @ room temperatue (RT) and a very low reverse leakage current density (JR < 10 5A/cm2 @ 3.5kV). An experimental breakdown voltage higher than 4.7kV has been measured in the air on polyimide passivated devices. This value corresponds to a junction termination efficiency of at least 80% according to the epitaxial properties. These SiC SBDs are well suited for high voltage, medium current, high frequency switching aerospace applications, matching perfectly as freewheeling diodes with Si IGBTs.
1163
Authors: Mihaela Alexandru, Viorel Banu, Phillippe Godignon, Miguel Vellvehi, José Millan
Abstract: The design and development of SiC integrated circuits (ICs) nowadays is a necessity due to the increasing demand for high temperature intelligent power applications and intelligent sensors. Due to the superior electrical, mechanical and chemical proprieties of 4H-SiC poly-type, 4H-SiC MESFET transistor is a good compromise for ICs on SiC able to work at higher temperatures (HT) than on Si. This paper presents new experimental results of approaching embedded logic gates with SiC MESFETs and resistors, built in junction-isolated tubs. The P+ implantation isolation technology offers important perspectives regarding the integration density of devices per unit area and wafer surface, being able to use far more complex design geometry for modeling ICs on SiC.
1048
Authors: Amador Pérez-Tomás, Dominique Tournier, Phillippe Godignon, Narcis Mestres, José Millan
Abstract: Thin (~10nm) Si layers have been deposited using Rapid Thermal CVD at temperatures ranging 950°C-1050°C. RTCVD deposited Si layers have been oxidized using N2O at 1300°C during relatively short times (15min) to produce SiO2 layers of 20-30nm. The interfacial characteristics of N2O oxidized RTCVD layers have been studied using the conductance method, showing a reduced traps density and a low band bending fluctuation when compared with conventional N2O grown oxides on 4H-SiC substrates. The surface topology of these layers has also been analyzed evidencing an adequate topography with low roughness.
673
Authors: Amador Pérez-Tomás, Phillippe Godignon, Narcis Mestres, Josep Montserrat, José Millan
Abstract: Oxidized Ta2Si layers have been used as high-k dielectric layer for 4H-SiC MOSFETs. The gate insulator was grown by dry oxidation of 40nm deposited Ta2Si during 1h at 1050oC. The dielectric constant obtained from 4H-SiC MIS capacitors is ~20 with an insulator thickness of 150nm. These devices exhibit adequate subthreshold, saturation and drive characteristics. For the MOSFETs fabricated on a p-implanted and annealed region, a peak mobility up to 45cm2/Vs has been extracted. The specific on-resistance of this device is 29mW·cm2 at room temperature with VDS=0.2V and VGS=14V.
713
Authors: M. Badila, Gheorghe Brezeanu, Jean-Pierre Chante, Marie Laure Locatelli, José Millan, Phillippe Godignon, Alexander A. Lebedev, P. Lungu, V. Banu
1355
Authors: Gheorghe Brezeanu, M. Badila, José Millan, Phillippe Godignon, Marie Laure Locatelli, Jean-Pierre Chante, Alexander A. Lebedev, V. Banu
1219
Authors: Gheorghe Brezeanu, Florin Draghici, Marian Badila, Ion Rusu, Florin Bernea, Phillippe Godignon
Abstract: A fully electrically isolated package for a SiC temperature sensor, able to work at high temperature, is presented in this paper. The adopted packaging solution was tested under thermal stress by varying the temperature between 300C and 400C (for 500 cycles) and between 50C and 400C (for other 500 cycles). The thermal stress had negligible effect on the capsules leakage currents (measured from the sensor terminals to the package metal casing) and did not degrade the glass which ensures the sealing of the capsule. The measurements and microphysical investigations showed a stable operation of the package up to temperatures of 400C.
925
Authors: R. Pérez, Narcis Mestres, Servane Blanqué, Dominique Tournier, Xavier Jordá, Phillippe Godignon, Roberta Nipoti
1253
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