Papers by Author: Praneet Bhatnagar

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Authors: Nicolas G. Wright, Konstantin Vassilevski, Irina P. Nikitina, Alton B. Horsfall, C. Mark Johnson, Praneet Bhatnagar, Peter Tappin

Abstract: New results are presented of a surface trench defect observed during anneal of room temperature Al implants. The size of the surface defect...

613
Authors: Praneet Bhatnagar, Alton B. Horsfall, Nicolas G. Wright, C. Mark Johnson, Konstantin Vassilevski, Anthony G. O'Neill

Abstract: Physics-based analytical models are seen as an efficient way of predicting the characteristics of power devices since they can achieve high...

1195
Authors: Praneet Bhatnagar, Alton B. Horsfall, Nicolas G. Wright, Anthony G. O'Neill, Konstantin Vassilevski, C. Mark Johnson
877
Authors: Praneet Bhatnagar, Nicolas G. Wright, Alton B. Horsfall, C. Mark Johnson, Michael J. Uren, Keith P. Hilton, A.G. Munday, A.J. Hydes

Abstract: Silicon Carbide (SiC) power devices are increasingly in demand for operations which require ambient temperature over 300°C. This paper...

987
Authors: Praneet Bhatnagar, Nicolas G. Wright, Alton B. Horsfall, Konstantin Vassilevski, C. Mark Johnson, Michael J. Uren, Keith P. Hilton, A.G. Munday, A.J. Hydes

Abstract: 4H-SiC depletion mode (normally-on) VJFETs were fabricated and characterised at temperatures up to 377 °C. The device current density at...

799
Authors: Konstantin Vassilevski, Irina P. Nikitina, Praneet Bhatnagar, Alton B. Horsfall, Nicolas G. Wright, Anthony G. O'Neill, Michael J. Uren, Keith P. Hilton, A.G. Munday, A.J. Hydes, C. Mark Johnson

Abstract: 4H-SiC diodes with nickel silicide (Ni2Si) and molybdenum (Mo) Schottky contacts have been fabricated and characterised at temperature up...

931
Authors: Alton B. Horsfall, C.H.A. Prentice, Peter Tappin, Praneet Bhatnagar, Nicolas G. Wright, Konstantin Vassilevski, Irina P. Nikitina

Abstract: Although Silicon Carbide has become the material of choice for high power applications in a range of extreme environments, the interest in...

1325
Authors: Peter Tappin, Rajat Mahapatra, Nicolas G. Wright, Praneet Bhatnagar, Alton B. Horsfall

Abstract: This report investigates the advantages of high-k materials as gate dielectrics for high power SiC trench MOSFET devices, by means of TCAD...

839
Authors: T. Ganguli, B.L. Dashora, P. Bhattacharya, L.M. Kukreja, Praneet Bhatnagar, H.S. Rawat, M. Lal, A. Gupta
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