Papers by Author: Rachael L. Myers-Ward

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Authors: Jian Hui Zhang, Leonid Fursin, Xue Qing Li, Xiao Hui Wang, Jian H. Zhao, Brenda L. VanMil, Rachael L. Myers-Ward, Charles R. Eddy, D. Kurt Gaskill

Abstract: This work reports 4H-SiC bipolar junction transistor (BJT) results based upon our first intentionally graded base BJT wafer with both base...

829
Authors: Jun Hu, Xiao Bin Xin, Petre Alexandrov, Jian H. Zhao, Brenda L. VanMil, D. Kurt Gaskill, Kok Keong Lew, Rachael L. Myers-Ward, Charles R. Eddy

Abstract: This paper reports a 4H-SiC single photo avalanche diode (SPAD) operating at the solar blind wavelength of 280 nm. The SPAD has an...

1203
Authors: Zachary Stum, A.V. Bolotnikov, Peter A. Losee, Kevin Matocha, Steve Arthur, Jeff Nasadoski, R. Ramakrishna Rao, O.S. Saadeh, Ljubisa Stevanovic, Rachael L. Myers-Ward, Charles R. Eddy, D. Kurt Gaskill

Abstract: Doubly-implanted SiC vertical MOSFETs were fabricated displaying a blocking voltage of 4.2kV and a specific on-resistance of 23 mΩ-cm2, on a...

637
Authors: Robert E. Stahlbush, Rachael L. Myers-Ward, Brenda L. VanMil, D. Kurt Gaskill, Charles R. Eddy

Abstract: The recently developed technique of UVPL imaging has been used to track the path of basal plane dislocations (BPDs) in SiC epitaxial layers....

271
Authors: Y. Shishkin, Rachael L. Myers-Ward, Stephen E. Saddow, Alexander Galyukov, A.N. Vorob'ev, D. Brovin, D. Bazarevskiy, R.A. Talalaev, Yuri N. Makarov

Abstract: A fully-comprehensive three-dimensional simulation of a CVD epitaxial growth process has been undertaken and is reported here. Based on a...

61
Authors: Brenda L. VanMil, Robert E. Stahlbush, Rachael L. Myers-Ward, Yoosuf N. Picard, S.A. Kitt, J.M. McCrate, S.L. Katz, D. Kurt Gaskill, Charles R. Eddy

Abstract: Conversion of basal plane dislocations (BPD) to threading edge dislocations (TED) in 8° off-cut 4H-SiC within an n+ buffer layer would...

61
Authors: Serguei I. Maximenko, Jaime A. Freitas, Yoosuf N. Picard, Paul B. Klein, Rachael L. Myers-Ward, Kok Keong Lew, Peter G. Muzykov, D. Kurt Gaskill, Charles R. Eddy, Tangali S. Sudarshan

Abstract: The effect of various types of in-grown stacking faults and threading screw/edge type dislocations on carrier lifetime and diffusion lengths...

211
Authors: D. Kurt Gaskill, Michael A. Mastro, Kok Keong Lew, Brenda L. VanMil, Rachael L. Myers-Ward, Ronald T. Holm, Charles R. Eddy

Abstract: A set of three 4H-SiC wafers with manufacturer specified micropipe density of 0-5 cm-2 were characterized by x-ray diffraction (XRD) maps...

235
Authors: O.Y. Goue, Yu Yang, J.Q. Guo, Balaji Raghothamachar, Michael Dudley, J.L. Hosteller, Rachael L. Myers-Ward, Paul B. Klein, D. Kurt Gaskill

Abstract: Lifetime maps for two 4H-SiC epi-wafers (samples 1 and 2) were recorded using microwave photoconductive decay (μPCD) measurements and...

297
Authors: Rachael L. Myers-Ward, Stephen E. Saddow, Shailaja P. Rao, Karl D. Hobart, M. Fatemi, Francis J. Kub
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