Papers by Author: Ranbir Singh

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Authors: Anant K. Agarwal, Sei Hyung Ryu, Ranbir Singh, Olof Kordina, John W. Palmour
1387
Authors: A.V. Suvorov, Lori A. Lipkin, G.M. Johnson, Ranbir Singh, John W. Palmour
1275
Authors: Yoshitaka Sugawara, Katsunori Asano, Ranbir Singh, John W. Palmour
1371
Authors: Ranbir Singh, Sei Hyung Ryu, John W. Palmour
1271
Authors: Sei Hyung Ryu, Ranbir Singh, John W. Palmour
1427
Authors: Ranbir Singh, Kenneth G. Irvine, Jim Richmond, John W. Palmour
1265
Authors: Michael E. Levinshtein, Pavel A. Ivanov, A.G. Tandoev, S.N. Yurkov, John W. Palmour, Ranbir Singh
411
Authors: M.D. Mathew, K. Bhanu Sankara Rao, S.L. Mannan, K. Paknikar, Ranbir Singh
537
Authors: Pavel A. Ivanov, Michael E. Levinshtein, Tigran T. Mnatsakanov, John W. Palmour, Ranbir Singh, Kenneth G. Irvine, Mrinal K. Das
Abstract: Forward current-voltage characteristics, reverse current recovery and post-injection voltage decay are measured for high voltage 4H-SiC p+non+-diodes. The effects of both minority carrier lifetime in diode no-base and injection coefficient of p+-emitter are investigated with respect to device performance at high injection levels.
973
Authors: N.V. Dyakonova, Pavel A. Ivanov, V.A. Kozlov, Michael E. Levinshtein, John W. Palmour, Sergey L. Rumyantsev, Ranbir Singh
1319
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