Papers by Author: Ru Yuan Yang

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Authors: Huang Yu Chen, Shoou Jinn Chang, Min Hang Weng, Ru Yuan Yang
Abstract: A Eu3+ activated strontium silicate phosphor was synthesized by solid-state reaction and Li+ ion was added to balance the charge valence. X-ray powder diffraction analysis confirmed the formation of pure Sr2SiO4 phase without second phase or phases of starting materials irrespective of the adding amount of Li+. Scanning electron microscopy showed large particle size and necking shape were obtained as the concentrations of Li+ ions increase. In the PL studies, the excitation spectrum of Sr2SiO4:Eu3+,Li+ phosphors exhibited a broad band in the UV region centered at about 270 nm attributed to charge transfer state (CTS) band. As the Li+ ion concentration increased, the photoluminescence intensity of the red emission at 617 nm of Eu3+ ions was enhanced. The results showed that Li+ ion is a effective charge compensators used in Sr2SiO4:Eu3+ phosphor.
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Authors: Yu Ming Peng, Yan Kuin Su, Cheng Jye Chu, Ru Yuan Yang, Ruei Ming Huang
Abstract: In this paper, the indium tin oxide (ITO) thin films were prepared by a sol-gel spin coating method and then annealed under different temperatures (400, 500 and 550°C) in a mixture atmosphere of 3.75% H2 with 96.25% N2 gases. The microstructure, optical and electrical properties of the prepared films were investigated and discussed. The XRD patterns of the ITO thin films indicated the main peak of the (222) plane and showed a high degree of crystallinity with an increase of the annealing temperature. In addition, due to the pores existing in the prepared films, the optical and electrical properties of the prepared films are degraded through the sol-gel process. Thus, the best transmittance of 70.0 %in the visible wavelength region and the lowest resistivity of about 1.1×10-2 Ω-cm were obtained when the prepared film was annealed at 550°C.
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Authors: Huang Yu Chen, Ru Yuan Yang, Shoou Jinn Chang
Abstract: A Eu3+ activated YInGe2O7phosphor was synthesized by solid-state reaction and lithium carbonate was added to change the morphology and photoluminescence properties. Scanning electron microscopy showed large particle size and necking shape were obtained as the concentrations of Li+ ions increase. In the PL studies, the excitation spectrum of YInGe2O7:Eu3+ phosphors exhibited a broad band in the UV region centered at about 272 nm attributed to charge transfer state (CTS) band, which has a little shift after Li+ ion was added. As the Li+ ion concentration increased, the photoluminescence intensity of the red emission at 620 nm of Eu3+ ions was enhanced, and the optimized concentration of of added Li+ ion is 0.05. The results showed that addition of Li+ ion allows YInGe2O7:Eu3+ phosphors emitting relatively pure red light.
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Authors: Hsiao Yeh Chu, Ming Hang Weng, Ru Yuan Yang, Chien Wei Huang, Chien Cheng Liu
Abstract: In this paper, we successfully fabricate polycrystalline silicon films with very large and uniform-size grains by the method of nanometer thick aluminum induced crystallization (nano-AIC) on the a-Si:H film deposited by plasma enhanced chemical vapor deposition (PECVD). The effect of annealing ramp-up time is discussed. Four different annealing ramp-up time, 1,5,10,20 hours, are tested. The results show the maximum average grain size obtained in this paper is about 60 μm under the condition of 20-hour annealing ramp-up time. The nano-AIC specimens show a much better leakage current characteristics than the AIC specimens since the Al layer in AIC process is much thicker and was not removed completely from the polycrystalline silicon film during Al wet selective etching process.
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Authors: Yu Ming Peng, Yan Kuin Su, Ru Yuan Yang
Abstract: In this paper, the Indium Tin Oxide (ITO) thin films were prepared by a sol-gel dip coating method and then annealed at 600°C under different atmosphere (vacuum, N2 and 96.25%N2+3.75%H2). Their microstructure, optical and electrical properties were investigated and discussed. Suitable atmosphere can improve the crystalline of the ITO films, therefore the optical and electrical properties of the ITO films are improved. The uv-vis results showed the maximum of transmittance in the visible range (380-780 nm) of 85.6% and the lowest resistivity of 4.4×10-2 Ω-cm when the ITO films were annealed under 96.25% N2 with 3.75% H2 atmosphere.
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Authors: Chuen Shii Chou, Ru Yuan Yang, Ming Hang Weng, Chun Hung Yeh
Abstract: This study investigated the effect of the sintering temperature on the performance of a dye-sensitized solar cell (DSSC). A nanocrystalline TiO2 layer was fabricated on the ITO substrate using the doctor blade technique, and the working electrode was then sintered in a high-temperature furnace. The working electrode with a TiO2 thin film was immersed in the solution of the CuPc dye (copper phthalocyanine 32 16 8 C H CuN ) powder for 12 hours. Finally, the DSSC was assembled, and the short-circuit photocurrent and the open-circuit photovoltage of DSSC were measured using a home-made I-V measurement system. The short-circuit photocurrent significantly increases from 8.02 to 16.85 μA as the sintering temperature increases from 165 to 550 C  . Furthermore, the open-circuit photovoltage substantially increases from 0.084 to 0.42V as the sintering temperature increases from 165 to 550 C  .
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