Papers by Author: S.M. Klotsman

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Authors: V.N. Kaigorodov, S.M. Klotsman, Valerie M. Koloskov, S.N. Shlyapnikov
679
Authors: S.M. Klotsman, G.N. Tatarinova, Alexander N. Timofeev
Abstract: The volume diffusion of nonmagnetic homovalent atomic probes (APs) from the IIIB group of the periodic table of the elements (PTE)Sc, La, and Th in Whas been studied by the method of secondary ion mass spectrometry. The Arrhenius dependences have the following parameters: the coefficients DSc - (D0)Sc = (1.4  0.3)10-4 m2s-1 and QSc = (546±4) kJ/mole; the coefficients D¬La - (D0)La = (1.6  0.8)×10-6 m2s-1 and QLa = (41010) kJ/mole; and the coefficients DTh - (D0)Th = 4.4×10-6 m2s-1 and QTh = 447 kJ/mole. It has been found that the coefficients D5dAP(Tm)W of the bulk diffusion of transition 5d APs in W coincide at its melting point (Tm)W. The enthalpies, QWSc,La,Th, of the volume diffusion of nonmagnetic homovalent APs from the IIIB group of PTE increase linearly with decreasing relaxation volumes, , of these APs, which interact with vacancies in W. The sums, (Q + E)WSc,La,Th, of the bulk diffusion enthalpies, QWSc,La,Th, and the relaxation energy, (E)WSc,La,Th, of the environments of homovalent APs diffusing to W are nearly constant.
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Authors: S.M. Klotsman, G.N. Tatarinova, Alexander N. Timofeev
Abstract: The Volume Diffusion of Homovalent Atomic Probes (APs) from the VB Group of the Periodic Ta-Ble of Elements (PTE) – V and Nb in W Single Crystals Has Been Studied by Using the Method of Secondary Ion Mass Spectrometry (SIMS). the Parameters of the Arrhenius Dependence of the Coefficients DV of Vanadium Volume Diffusion in W Have Been Measured: (D0)V = (1.3  0.4) X 10-4 M2s-1 and QV = (564 ± 6) Kj/mol. the Parameters (D0,Q)Nb of the Bulk Diffusion of Nb Aps in W Have Been Estimated with the Help of Several Measured Coefficients Dnb and the Empirical Correlation [1,2]: (D = DWW)(Tm)W: the Diffusion Coefficients of Substitutional Non-Magnetic 5d-Aps Coincide with the Self-Diffusion Coefficients in W at its Melting Point (Tm)W. the Enthalpies Qnb,Ta of the Bulk Diffusion of Non-Magnetic (nm) Homovalent Aps from the VB Group of PTE – Nb and Ta [3] Also Coincide with the Relaxation Volumes vacVBAPs of Complexes “vacancies-VB Aps” in the W Lattice. Electron Contributions (EDN)vacVBAPs to the Energies Evacvbaps of Interaction of Point Defects in Complexes “vacancies- VB Nm- Aps” Are Lower than in Complexes “vacancies-IVB Nm- Aps” [4]. the Dependence of {EDN(n)}vacVBAPs the Electron Contributions (EDN)vacVBAPs on the Difference of N Numbers of Periods of PTE the Deviation of Contributions (EDN)vacVAPs for Vanadium Aps to En-Ergies Evacvaps of their Interaction in Complexes “vacancy-VAP” Has Been Determined. this Devi-Ation Is Conditioned by the Contribution of the Exchange Energy (Eexch)VAP of Vanadium to the En-Ergy Evacvaps of the Point-Defect Interactions in the Complex “vacancy-VAP”.
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Authors: S.M. Klotsman, G.N. Tatarinova, Alexander N. Timofeev
Abstract: The bulk diffusion of homovalent non-magnetic atomic probes (APs) from the IVB group of the periodic table of elements (PTE) – Ti and Zr in tungsten single crystals was investigated by sec-tioning, using secondary ion mass spectrometry (SIMS). The Arrhenius dependences had the fol-lowing parameters: DWTi - (D0)WTi = (3.00.4 ) x 10-4 m2s-1, enthalpy QWTi = (576 ± 9) kJ/mole; DWZr - (D0)WZr = (2.3  0.6) x 10-4 m2s-1, QWZr = (561 9) kJ/mole. The measured parameters (D0,Q)WTi,Zr of diffusion of Ti and Zr atomic probes (APs) in W are in accord with the empirical correlation: the diffusion coefficients of the substitutional APs coincide with the self-diffusion coefficients in W at (Tm)W – its melting temperature. Enthalpies QWTi,Zr,Hf of the volume diffusion of homovalent non-magnetic APs of the IVB group of periodic table of elements (PTE) - Ti, Zr and Hf increase with the decrease of relaxation volumes of the complexes «vacancy-IVBAP» in W lattice. The energies (E)WvacIVBAP of elastic relaxation of the complexes «vacancy-IVBAP» in W lattice were estimated. Electron contributions EDN to the energies EWvacIVBAP of interaction of the point defects in complexes «vacancy-IVBAP» increase relative to value EWvacIIIBAP of interac-tion of the point defects in complexes «vacancy-IIIBAP» with the growth of d-electrons number in comparison with the complexes «vacancy-IIIBAP».
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Authors: S.M. Klotsman, M.L. Klebanov, V.G. Puschin, R.R. Romanova, K.A. Stephanov, A.N. Timofeyev
1509
Authors: S.M. Klotsman, Valerie M. Koloskov, S.V. Osetrov, I.P. Polikarpova, G.N. Tatarinova, A.N. Timofeyev
439
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