Papers by Author: S. Rath

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Authors: L. Merz, S. Rath, Volker Piotter, Robert Ruprecht, Jürgen Haußelt
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Authors: H.S. Mavi, S. Rath, Arun Shukla
Abstract: Laser-induced etching of silicon is used to generate silicon nanocrystals. The pore structure depends on the substrate type and etching laser wavelength. Porous silicon (PS) samples prepared by Nd:YAG laser (1.16 eV) etching of n-type substrate showed a fairly uniform and highly interconnected network of nearly circular pores separated by thin columnar boundaries, while no circular pits were produced by argon- ion laser (2.41 eV) etching under similar conditions. The size and size distribution of the nanocrystals are investigated by Raman and photoluminescence spectroscopies and analyzed within the framework of quantum confinement models.
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Authors: S. Rath, S.N. Sahu
Abstract: Stoichiometric mercury-telluride (HgTe) nanocrystals, free from any foreign impurities, have been prepared by an electrochemical technique. Transmission electron microscopy and selected area diffraction studies confirm that the size of HgTe nanocrystals with cubic phase range from 4 – 7 nm and are preferentially oriented. Optical absorption studies indicate that the band gap of HgTe nanocrystals is 2.14 eV. Room temperature photoluminescence measurements show band edge and trap dominated luminescence in the visible regime. Micro-Raman scattering analysis of the HgTe nanocrystals sample reveals the 1LO Raman vibrational mode is at 142.5 cm-1suggesting a shift of 6 cm-1 from it’s bulk value and confirms the crystalline size to be small.
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