Papers by Author: Sergey L. Rumyantsev

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Authors: Q. Jon Zhang, Anant K. Agarwal, Craig Capell, L. Cheng, Michael J. O'Loughlin, Albert A. Burk, John W. Palmour, Sergey L. Rumyantsev, T. Saxena, Michael E. Levinshtein, A. Ogunniyi, Heather O'Brien, Charles Scozzie
Abstract: In this paper, for the first time, we report 12 kV, 1 cm2 SiC GTOs demonstrated with a novel negative bevel termination, which improves the breakdown voltage by >3.5 kV compared to the conventional multiple-zone Junction Termination Extension (JTE). The significant improvement in the blocking voltage was attributed to the elimination of the electrical field crowding in the periphery of the mesa with conventional JTE termination. This new termination has been used in both electrically and optically triggered SiC GTOs. An ultrafast turn-on speed of 70 ns has been measured on 12 kV, 1 cm2 SiC light triggered GTOs.
1151
Authors: Sergey L. Rumyantsev, Michael S. Shur, Michael E. Levinshtein, Pavel A. Ivanov, John W. Palmour, Anant K. Agarwal, Sarit Dhar
Abstract: 4H-SiC MOSFETs with an epitaxial channel and NO postoxidation annealing have Si-like dependencies of noise on gate voltage. Such dependencies indicate that the density of the negatively charged oxide traps responsible for 1/f noise, Ntv, does not depend on the position of the Fermi level. The Ntv was found to be ~ 2×1019 cm-3eV-1. This value is considerably smaller than previously measured for transistors with ion implanted channels.
1105
Authors: Anant K. Agarwal, Pavel A. Ivanov, Michael E. Levinshtein, John W. Palmour, Sergey L. Rumyantsev
1349
Authors: Sergey L. Rumyantsev, Michael S. Shur, Michael E. Levinshtein, Pavel A. Ivanov, John W. Palmour, Mrinal K. Das, Brett A. Hull
Abstract: Low-frequency noise in 4H-SiC MOSFETs has been measured for the first time. At drain currents varying from deep subthreshold to strong inversion, the 1/f (flicker) noise dominated at frequencies 1 - 105 Hz. The dependence of relative spectral noise density, , on drain current Id (at a constant drain voltage Vd) differs qualitatively from that in Si MOSFETs. In Si MOSFETs, ~ 1/ in strong inversion, whereas tends to saturate in sub-threshold. In 4H-SiC MOSFETs under study, ~ 1/ over the whole range of currents from deep sub-threshold to strong inversion. Similar noise behavior is often observed in poly- or a-Si TFTs. The effective channel mobility in 4H-SiC MOSFETs, 3 - 7 cm2/Vs, is also as low as that in TFTs. Both noise behavior and transport properties of 4H-SiC MOSFETs are explained, analogously to TFTs, by a high density of localized states (bulk and interface) near the conduction band edge in the ion implanted p-well.
817
Authors: Sergey L. Rumyantsev, David C. Look, Michael E. Levinshtein, M. Asif Khan, G. Simin, V. Adivarahan, J. Molnar, Michael S. Shur
1603
Authors: Sergey L. Rumyantsev, Mikhail E. Levinshtein, Michael S. Shur, Tanuj Saxena, Q.J. Zhang, Anant Agarwal, L. Cheng, John W. Palmour
Abstract: We report on switch-on of 12 kV, 1cm2 optically triggered 4H-SiC thyristor fabricated by CREE Inc., to Imax=270 А with current rise time of ~ 3 s. Temperature dependence of holding current Ih in this thyristor has been experimentally studied in the temperature range from 300 to 425 K. It is shown that measurements of Ih temperature dependence under condition of optical switch-on at small anode bias and large load resistance reveal the existence of a ”weak point” within the optical window. This point is characterized by a much smaller critical charge than that within the remaining part of the window.
990
Authors: N.V. Dyakonova, Pavel A. Ivanov, V.A. Kozlov, Michael E. Levinshtein, John W. Palmour, Sergey L. Rumyantsev, Ranbir Singh
1319
Authors: Anant K. Agarwal, Pavel A. Ivanov, Michael E. Levinshtein, John W. Palmour, Sergey L. Rumyantsev, Sei Hyung Ryu, Michael S. Shur
743
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